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PDF 2SB1682 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1682 | |
| Descripción | Silicon PNP Triple Diffused Type | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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2SB1682
TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington power transistor)
2SB1682
○ Power Amplifier Applications
○ High-Power Switching Applications
Unit: mm
• High-breakdown voltage: VCEO = −160 V (min)
• Complementary to 2SD2636
Maximum Ratings (Tc = 25°C)
Characteristic Sy
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC I
Pulse I
Base current
Collector power dissipation
Junction temperature
Storage temperature range
mbol
VCBO
VCEO
VEBO
C
CP
IB
PC
Tj
Tstg
Equivalent Circuit
Base
Collector
Rating
−160
−160
−5
−8
−15
−1
100 W
150
−55 to 150
Unit
V
V
V
A
A
°C
°C
1.Base
2.Collector(heatsink)
3.Emitter
JEDEC
―
JEITA
―
TOSHIBA 2
-16C1A
Weight: 4.7 g (typ.)
≈ 30 Ω
Emitter
Electrical Characteristics (Tc = 25°C)
Characteristic S
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Turn-on Time
Switching Time
Storage Time
Fall Time
ymbol
Test Conditions
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE
fT
VCB = −160 V, IE = 0
VEB = −5 V, IC = 0
IC = −10 mA, IB = 0
VCE = −4 V, IC = −1 A
VCE = −4 V, IC = −7 A
IC = −7 A, IB = −7 mA
VCE = −4 V, IC = −7 A
VCE = −10 V, IC = −1 A
Min Typ. Max Unit
― ― −10 µA
― ― −10 µA
−160 ―
―V
500 ―
―
5000 ― 1 5000
― ― −3.0 V
― ― −3.0 V
― 35
― MH z
ton
IB2 VCC ∼− 50 V
― 0. 7
―
IB1 7Ω Output
tstg 20µs Input IB1
― 1. 3
―
IB1 = −IB2 = −7mA IB2
tf Duty Cycle < 1%
― 0. 7
―
µs
1 2005-07-27
http://www.Datasheet4U.com
1 page  
2SB1682
5 2005-07-27
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 2SB1682.PDF ] | |
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