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PDF B1321A Data sheet ( Hoja de datos )

Número de pieza B1321A
Descripción PNP Transistor - 2SB1321A
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! B1321A Hoja de datos, Descripción, Manual

Transistors
2SB1321A
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD1992A
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
I Features
Large collector power dissipation P C (600 mW)
Allowing supply with the radial taping
0.65 max.
I Absolute Maximum Ratings Ta = 25°C
0.45+−00..105
2.5±0.5 2.5±0.5
123
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
60
50
7
1
500
600
150
55 to +150
V
V
V
A
mA
mW
°C
°C
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT1 Type Package
1.2±0.1
0.45+−00..105
0.65
max.
(HW Type)
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio *1
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
ICEO
VCBO
VCEO
VEBO
hFE1 *2
hFE2
VCE(sat)
fT
Cob
VCB = −20 V, IE = 0
VCE = −20 V, IB = 0
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
IE = −10 µA, IC = 0
VCE = −10 V, IC = −10 mA
VCE = −10 V, IC = −500 mA
IC = −300 mA, IB = −30 mA
VCB = −10 V, IE = 10 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
60
50
7
85
40
0.1
1
340
0.35
200
6
0.6
15
µA
µA
V
V
V
V
MHz
pF
Note) *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S No-rank
hFE1 85 to 170 120 to 240 170 to 340 85 to 340
Product of no-rank is not classified and have no indication for rank.
1
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