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Número de pieza AN10808
Descripción Thermal consideration
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AN10808
Thermal consideration of NXP FlatPower MEGA Schottky
barrier rectifiers - Selection criteria
Rev. 2 — 12 February 2013
Application note
Document information
Info Content
Keywords
FlatPower MEGA Schottky barrier rectifiers, thermal consideration,
selection criteria
Abstract
This application note describes how to select a medium power Schottky
barrier rectifier from the NXP FlatPower package family.
http://www.Datasheet4U.com

1 page




AN10808 pdf
NXP Semiconductors
AN10808
NXP FlatPower MEGA Schottky rectifier - Thermal selection criteria
3. PMEG FlatPower Schottky barrier rectifier selection criteria
Circuit performance and long-term reliability are affected by the temperature of the die.
Electrical power dissipated in any semiconductor device is a source of heat. This source
increases the temperature of the die above the reference point of 298.15 K | 25 C | 77 F.
3.1 Temperature limits
The increase in temperature depends on the power capability of the device and the
thermal resistance of the complete system (SMD + PCB).
It can be described as follow:
Ptot
=
T----j---m----a---x---–--T--a--m--b--
Rthj – a
(1)
Heat transfer can occur by radiation, conduction and convection.
Surface-Mounted Devices (SMD) loose most of their heat by conduction when mounted
on a substrate. The heat conducts from the junction via the package leads and the
soldering connections to the substrate. Some heat radiates from the package into the
ambient, where it disappears by convection or by active cooling air. The heat from the
substrate disappears in the same way.
The thermal resistance from junction to ambient can be described as follow:
Rthj – a= Rth j – sp + Rth sp – a
(2)
Calculating the maximum power capability, the following temperatures must be taken into
account:
• maximum junction temperature Tj(max)
• maximum solder point temperature Tsp(max)
• ambient temperature Tamb
As an example, the limiting factors of the SOD123W package are shown by the
PMEG3020ER in the following sections.
AN10808
Application note
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2013
© NXP B.V. 2013. All rights reserved.
5 of 17

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AN10808 arduino
NXP Semiconductors
AN10808
NXP FlatPower MEGA Schottky rectifier - Thermal selection criteria
4. Produc t portfolio
Table 1. Product portfolio with Tj = 150 C
Type number
VR
IF
PMEG2010ER
20 V
1A
IFSM(max)
50 A
PMEG2010BER 20 V
1A
50 A
PMEG3010ER
30 V
1A
50 A
PMEG3010BER 30 V
1A
50 A
PMEG3010EP
30 V
1A
50 A
PMEG3010BEP 30 V
1A
50 A
PMEG3020ER
30 V
2A
50 A
PMEG3020BER 30 V
2A
50 A
PMEG3020EP
30 V
2A
50 A
PMEG3020BEP 30 V
2A
50 A
PMEG3020CEP 30 V
2A
50 A
PMEG3020DEP 30 V
2A
50 A
PMEG3030EP
30 V
3A
50 A
PMEG3030BEP 30 V
3A
50 A
PMEG3050EP
30 V
5A
70 A
PMEG3050BEP 30 V
5A
70 A
PMEG4010ER
40 V
1A
50 A
PMEG4010EP
40 V
1A
50 A
PMEG4020ER
40 V
2A
50 A
PMEG4020EP
40 V
2A
50 A
PMEG4030ER
40 V
3A
50 A
PMEG4030EP
40 V
3A
50 A
PMEG4050EP
40 V
5A
70 A
PMEG6010ER
60 V
1A
50 A
PMEG6010EP
60 V
1A
50 A
PMEG6020ER
60 V
2A
50 A
PMEG6020EP
60 V
2A
50 A
PMEG6030EP
60 V
3A
50 A
VF(max) at IF IR(max) at VR Package
340 mV
1.00 mA SOD123W
450 mV
0.05 mA SOD123W
360 mV
1.50 mA SOD123W
450 mV
0.05 mA SOD123W
360 mV
1.50 mA SOD128
450 mV
0.05 mA SOD128
420 mV
1.50 mA SOD123W
520 mV
0.05 mA SOD123W
360 mV
3.00 mA SOD128
450 mV
0.10 mA SOD128
420 mV
1.50 mA SOD128
520 mV
0.05 mA SOD128
360 mV
5.00 mA SOD128
450 mV
0.15 mA SOD128
360 mV
8.00 mA SOD128
450 mV
0.25 mA SOD128
490 mV
0.05 mA SOD123W
490 mV
0.05 mA SOD128
490 mV
0.10 mA SOD123W
490 mV
0.10 mA SOD128
540 mV
0.10 mA SOD123W
490 mV
0.20 mA SOD128
490 mV
0.30 mA SOD128
530 mV
0.06 mA SOD123W
530 mV
0.06 mA SOD128
530 mV
0.15 mA SOD123W
530 mV
0.15 mA SOD128
530 mV
0.20 mA SOD128
AEC-Q101
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
Table 2. Product portfolio with Tj = 175 C
Type number
VR
IF
PMEG4010ETR 40 V
1A
IFSM(max)
50 A
PMEG4010ETP 40 V
1A
50 A
PMEG4020ETR 40 V
2A
50 A
PMEG4020ETP 40 V
2A
50 A
PMEG4030ETP 40 V
3A
70 A
PMEG4050ETP 40 V
5A
50 A
PMEG6010ETR 60 V
1A
50 A
PMEG6020ETR 60 V
2A
50 A
VF(max) at IF IR(max) at VR Package
490 mV
0.05 mA SOD123W
490 mV
0.05 mA SOD128
490 mV
0.10 mA SOD123W
490 mV
0.10 mA SOD128
490 mV
0.20 mA SOD128
530 mV
0.30 mA SOD128
530 mV
0.15 mA SOD123W
530 mV
0.15 mA SOD123W
AEC-Q101
YES
YES
YES
YES
YES
YES
YES
YES
AN10808
Application note
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2013
© NXP B.V. 2013. All rights reserved.
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