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PDF K5A65D Data sheet ( Hoja de datos )
| Número de pieza | K5A65D | |
| Descripción | TK5A65D | |
| Fabricantes | Toshiba | |
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TK5A65D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
TK5A65D
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 2.6 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)
• Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics S
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
ymbol
VDSS
VGSS
ID
IDP
PD
EAS 180
IAR 5
EAR 4.0
Tch 150
Tstg
Rating
650
±30
5
20
40
−55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
⎯
JEITA
SC-67
TOSHIBA 2-10U
1B
Weight: 1.7 g (typ.)
Note: Using c ontinuously under h eavy l oads ( e.g. the a pplication of hig h te mperature/current/voltage a nd th e
significant change in temp erature, etc.) may cause this pro duct to decrea se in the relia bility significantly even
if the operatin g conditio ns (i.e . operating temperatur e/current/voltage, etc.) are within the abs olute m aximum
ratings. Pl ease desi gn th e appropriate rel iability up on r eviewing t he Toshiba Semi conductor Re liability
Handbook (“H andling Preca utions”/“Derating C oncept a nd Meth ods’’) and individual rel iability d ata (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics S
Thermal resistance, channel to case
Thermal resistance, channel to ambient
ymbol
Rth (ch-c)
Rth (ch-a)
Max
3.125
62.5
Unit
°C/W
°C/W
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 14.4 mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
3
1 2010-08-12
http://www.Datasheet4U.com
1 page  
rth – tw
10
1 Duty = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.001
10 μ
100 μ
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth (ch-c) = 3.125 °C/W
1m
10 m
100 m
1
10
PULSE WIDTH tw (s )
TK5A65D
SAFE OPERATING AREA
100
ID max (pulsed) *
10
ID max (continuous)
100 μs *
1 ms *
1
DC operation
Tc = 25°C
0.1
*: SINGLE NONREPETITIVE
0.01 PULSE Tc = 25°C
CURVES MUST BE
DERATED LINEARLY WITH
INCREASE IN
TEMPERATURE.
0.001
1 10 100
VDSS max
100
DRAIN-SOURCE VOLTAGE VDS (V)
0
EAS – Tch
250
200
150
100
50
0
25 50 75 100 125 150
CHANNEL TEMPERATURE (INITIAL)
Tch(°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVEFORM
RG = 25 Ω
VDD = 90 V, L = 14.4 mH
ΕAS
=
1
2
⋅L ⋅I2
⋅ ⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2010-08-12
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K5A65D.PDF ] | |
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