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Número de pieza | FQU1N60C | |
Descripción | 600V N-Channel MOSFET | |
Fabricantes | Kersemi Electronic | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FQU1N60C (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! FQD1N60C / FQU1N60C
600V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Corise Semiconductorÿs proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
• 1A, 600V, RDS(on) = 11.5Ω @VGS = 10 V
• Low gate charge ( typical 4.8nC)
• Low Crss ( typical 3.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
D
D!
D-PAK
G S FQD Series
GDS
I-PAK
FQU Series
G!
●
◀▲
●
●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C)*
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQD1N60C / FQU1N60C
600
1A
0.6
4A
± 30
33
1A
2.8
4.5
2.5
28
0.22
-55 to +150
300
Units
V
A
V
mJ
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Typ
Max
Units
--
4.53
°C/W
-- 50 °C/W
-- 110 °C/W
http://www.Datasheet4U.com
1 page Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS
=
--1--
2
L IAS2
BVDSS
--------------------
BVDSS -V DD
BVDSS
IAS
VDD ID (t)
10V
tp
DUT
VDD VDS (t)
t p Time
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FQU1N60C.PDF ] |
Número de pieza | Descripción | Fabricantes |
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FQU1N60C | 600V N-Channel MOSFET | Fairchild Semiconductor |
FQU1N60C | 600V N-Channel MOSFET | Kersemi Electronic |
FQU1N60C | N-Channel MOSFET | HAOHAI |
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