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PDF FGH40N120AN Data sheet ( Hoja de datos )
| Número de pieza | FGH40N120AN | |
| Descripción | 1200V NPT IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FGH40N120AN
1200V NPT IGBT
July 2008
IGBT®
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A
• High input impedance
•R oHS complaint
Applications
Induction Heating, U PS, AC & D C motor controls and general
purpose inverters.
Description
Employing NPT technolo gy, Fairchild’s AN series of IGBTs pro-
vides low conduction and switching losses. The AN series offers
an solution for application such as indu ction heating (IH), motor
control, ge neral pur pose inverter s and un interruptible pow er
supplies (UPS).
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
Parameter
VCES
VGES
IC
ICM(1)
PD
SCWT
TJ
TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@TC = 25°C6
@TC = 100°C4
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time,
VCE = 600V, VGE = 15V, TC = 125°C
Operating Junction Temperature
@TC = 25°C
@TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 seconds
Notes:
(1) Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
C
G
E
FGH40N120AN
1200
±25
4
0
160
417
167
10
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
µs
°C
°C
°C
Typ.
--
--
Max.
0.3
40
Units
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FGH40N120AN Rev. A2
1
www.fairchildsemi.com
http://www.Datasheet4U.com
1 page  
Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current
Common Emitter
V = ±15V, R = 5Ω
GE G
10
T = 25°C
C
T = 125°C
C
Eon
Eoff
1
0.1
20 30 40 50 60 70
Collector Current, I [A]
C
Figure 15. SOA Characteristics
80
500
IC MAX (Pulse)
100
10 IC MAX (Continuous)
1
10µs
100µs
1ms
10 ms
DC Operation
Figure 14. Gate Charge Characteristics
16
Common Emitter
14
R = 15Ω
L
T = 25°C
C
12
Vcc = 200V
600V
10
400V
8
6
4
2
0
0 50 100 150
Gate Charge, Q [nC]
g
Figure 16. Turn-Off SOA
200
250
100
10
0.1
0.01
1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10 100 1000 2000
Collector-Emitter Voltage, VCE [V]
Safe Operating Area
V = 15V, T = 125oC
GE C
1
1 10 100
Collector-Emitter Voltage, V [V]
CE
Figure 17. Transient Thermal Impedance of IGBT
1000
1
0.5
0.1
0.2
0.1
0.05
0.01 0.02
0.01
single pulse
1E-3
1E-5
1E-4
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
1
10
FGH40N120AN Rev. A2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FGH40N120AN.PDF ] | |
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