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PDF DAN217S6R Data sheet ( Hoja de datos )
| Número de pieza | DAN217S6R | |
| Descripción | High speed multi-chip diode | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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CYStech Electronics Corp.
High –speed multi-chip diode
DAN217S6R
Spec. No. : C328S6
Issued Date : 2009.11.23
Revised Date :
Page No. : 1/6
Description
The DAN217S6R consists of two set of high-speed switching diodes connected in series, fabricated in
planar technology, and encapsulated in the small SOT-363 plastic SMD package.
Equivalent Circuit
DAN217S6R
Outline
SOT-363
1：Anode
2：Cathode
Features
• Small plastic SMD package
• High switching speed: max. 4ns
• Continuous reverse voltage: max. 75V
• Repetitive peak reverse voltage: max. 85V
• Repetitive peak forward current: max. 450mA.
• Very low leakage current
• Pb-free package
Applications
• High-speed switching in thick and thin-film circuits.
DAN217S6R
CYStek Product Specification
http://www.Datasheet4U.com
1 page  
CYStech Electronics Corp.
Spec. No. : C328S6
Issued Date : 2009.11.23
Revised Date :
Page No. : 5/6
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
240 +0/-5 °C
10-30 seconds
6°C/second max.
6 minutes max.
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
DAN217S6R
CYStek Product Specification
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet DAN217S6R.PDF ] | |
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