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PDF US1B Data sheet ( Hoja de datos )

Número de pieza US1B
Descripción 1.0AMP High Efficient Surface Mount Rectifiers
Fabricantes TAIWAN SEMICONDUCTOR 
Logotipo TAIWAN SEMICONDUCTOR Logotipo



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No Preview Available ! US1B Hoja de datos, Descripción, Manual

Pb
RoHS
COMPLIANCE
creat by ART
US1A - US1M
1.0AMP. High Efficient Surface Mount Rectifiers
SMA/DO-214AC
Features
— Glass passivated chip junction
— For surface mounted application
— Low profile package
— Built-in strain relief
— Ideal for automated placement
— Easy pick and place
— Ultrafast recovery time for high efficiency
— Low forward voltage, low power loss
— High temperature soldering guaranteed:
260/10 seconds on terminals
— Plastic material used carries Underwriters
Laboratory Classification 94V-0
— Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
— Case: Molded plastic
— Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
— Polarity: Indicated by cathode band
— Weight: 0.064 grams
Dimensions in inches and (millimeters)
Marking Diagram
US1X
= Specific Device Code
G = Green Compound
Y = Year
WW = Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol US1A US1B US1D US1G US1J US1K US1M
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM 50 100 200 400 600 800 1000
VRMS 35 70 140 280 420 560 700
VDC 50 100 200 400 600 800 1000
Unit
V
V
V
Maximum Average Forward Rectified Current
IF(AV)
1
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage (Note 1)
@1A
VF
Maximum Reverse Current @ Rated VR TA=25
T A=125
IR
Maximum Reverse Recovery Time (Note 2)
Trr
Typical Junction Capacitance (Note 3)
Cj
Typical Thermal Resistance
RθjA
RθjL
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
30
1.0
5
150
50
15
75
27
- 55 to + 150
- 55 to + 150
1.7
75
10
A
V
uA
nS
pF
OC/W
OC
OC
Version:G11
http://www.Datasheet4U.com

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