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PDF LKK47-06C5 Data sheet ( Hoja de datos )

Número de pieza LKK47-06C5
Descripción Power MOSFET ( Transistor )
Fabricantes IXYS 
Logotipo IXYS Logotipo



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No Preview Available ! LKK47-06C5 Hoja de datos, Descripción, Manual

Advanced Technical Information
LKK 47-06C5
Dual CoolMOS™ 1) Power MOSFET
Common Source Topology
DCB isoated package
VDSS
= 600 V
ID25 = 47 A
RDS(on) max = 45 mΩ/MOSFET
MOSFET T1/T2
Symbol
VDSS
VD1D2
VGS
ID25
ID90
EAS
EAR
Conditions
TVJ = 25°C
TVJ = 25°C
TC = 25°C
TC = 90°C
single pulse
repetitive
ID = 11 A; TC = 25°C
4
D1 T1
2
G1
3
S T2
1
G2
5
D2
Maximum Ratings
600 V
±600 V
±20 V
47 A
32 A
1950 mJ
3 mJ
Symbol
RDSon
R
DSon
VGSth
IDSS
IGSS
Ciss
Coss
Q
g
Qgs
Qgd
t
d(on)
tr
t
d(off)
tf
R
thJC
RthCH
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V; ID = 44 A
total between D1 and D2
VG1S = VG2S = 10 V; ID = 44 A
VDS = VGS; ID = 3 mA
VDS = VDSS; VGS = 0 V; TVJ = 25°C
TVJ = 125°C
VGS = ±20 V; VDS = 0 V
VGS = 0 V; VDS = 100 V
f = 1 MHz
40 45 mΩ
80 mΩ
2.5 3
50
6800
320
3.5 V
10 µA
µA
100 nA
pF
pF
VGS= 0 to10 V; VDS = 400 V; ID = 44 A
150 190 nC
35 nC
50 nC
VGS= 10 V; VDS = 400 V;
ID = 44 A; RG = 3.3 Ω
30 ns
20 ns
100 ns
10 ns
with heatsink compound
0.45 K/W
0.25
K/W
1
2
3
4
5
Features
• fast CoolMOS™ 1) power MOSFET
4th generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
• Enhanced total power density
Applications
• AC Switch
- power regulation of AC heating
- light dimming
• Power factor correction (PFC)
interleaved operation mode
• Push pull converter
1) CoolMOSis a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
20090209b
1-4
http://www.Datasheet4U.com

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