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PDF RF1S540SM Data sheet ( Hoja de datos )
| Número de pieza | RF1S540SM | |
| Descripción | N-Channel Power MOSFETs | |
| Fabricantes | Harris | |
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Semiconductor
November 1997
IRF540, IRF541, IRF542,
IRF543, RF1S540, RF1S540SM
25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm,
N-Channel Power MOSFETs
Features
• 25A and 28A, 80V and 100V
• rDS(ON) = 0.077Ω and 0.100Ω
• Single Pulse Avalanche Energy Rated
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field eff ect tr ansistors. The y are adv anced po wer
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdo wn avalanche mode
of operation. All of these po wer MOSFETs are designed f or
applications such as s witching regulators, switching conver-
tors, motor dr ivers, relay drivers, and dr ivers for high po wer
bipolar s witching tr ansistors requir ing high speed and lo w
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17421.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF540
TO-220AB
IRF540
IRF541
TO-220AB
IRF541
IRF542
TO-220AB
IRF542
IRF543
TO-220AB
IRF543
RF1S540
TO-262AA
RF1S540
RF1S540SM
TO-263AB
RF1S540SM
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S540SM9A.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-262AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-1
File Number
2309.3
http://www.Datasheet4U.com
1 page  
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
Typical Performance Curves Unless Otherwise Specified (Continued)
50
80µs PULSE TEST
40
VGS = 10V
30
VGS = 8V
VGS = 7V
VGS = 6V
20
10
0
0
VGS = 5V
VGS = 4V
1.0 2.0 3.0 4.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
5.0
FIGURE 6. SATURATION CHARACTERISTICS
100
80µs PULSE TEST
DUTY CYCLE = 0.5% MAX
10
175oC
25oC
1
VDS ≥ 50V
0.1
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
10
1.0
80µs PULSE DURATION
0.8
3.0
VGS = 10V, ID = 28A
2.4
0.6 1.8
0.4 1.2
0.2 VGS = 10V
VGS = 20V
0
0
25
50 75
100 125
ID, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0.6
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
3000
2400
1800
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
CISS
1200
600
0
1
COSS
CRSS
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5-5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RF1S540SM.PDF ] | |
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