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PDF FDB38N30U Data sheet ( Hoja de datos )

Número de pieza FDB38N30U
Descripción N-Channel UniFET Ultra FRFET MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FDB38N30U
N-Channel UniFETTM Ultra FRFETTM MOSFET
300 V, 38 A, 120 mΩ
November 2013
Features
•R DS(on) = 120 mΩ (Max.) @ VGS = 10 V, ID = 19 A
• Low Gate Charge (Typ. 56 nC)
•L ow Crss (Typ. 55 pF)
• 100% Avalanche Tested
•R oHS Compliant
Applications
• Uninterruptible Power Supply
• LCD/LED/PDP TV
• AC-DC Power Supply
Description
UniFETTM MOSFET is Fairchild Semicondu ctor’s hig h voltage
MOSFET family based on planar stripe and DMOS techn ology.
This MOSFET is tailored to r educe on-state r esistance, and to
provide be tter switching performance and higher avalanche
energy streng th. UniFET Ultra F RFETTM MOSFET has much
superior body diode reverse recovery performance. Its trr is less
than 50nsec and the r everse dv/dt immunity is 20V/nsec while
normal planar MOSF ETs have over 200 nsec and 4 .5V/nsec
respectively. Ther efore UniFET Ultra FRFET MO SFET can
remove additional component and improve system r eliability in
certain applications thatrequire performance improvement of the
MOSFET’s bo dy diode. Th is dev ice family is suitable for
switching power co nverter applications su ch as power factor
correction (PFC ), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
D
D
G
S
D2-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC2
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDB38N30U
300
±30
38
22.8
152
722
38
31.3
20
313
.5
-55 to +150
300
FDB38N30U
0.4
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2012 Fairchild Semiconductor Corporation
FDB38N30U Rev. C1
1
www.fairchildsemi.com
http://www.Datasheet4U.com

1 page




FDB38N30U pdf
IG = const.
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
t on
Figure 13. Resistive Switching Test Circuit & Waveforms
td(off)
tf
t off
VGS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2012 Fairchild Semiconductor Corporation
FDB38N30U Rev. C1
5
www.fairchildsemi.com

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