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PDF 2SC4793AF Data sheet ( Hoja de datos )
| Número de pieza | 2SC4793AF | |
| Descripción | High Frequency NPN Power Transistor | |
| Fabricantes | NELL SEMICONDUCTOR | |
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SEMICONDUCTOR
2SC4793AF RRooHHSS
Nell High Power Products
High Frequency NPN Power Transistor
1A/230V/20W
FEATURES
High transition frequency:
fT = 100MHz (typ.)
Complementary to 2SA1837AF
TO-220F package which can be
installed to the heat sink with one screw
APPLICATIONS
Power amplifier
Driver stage amplifier
BCE
TO-220F
(2SC4793AF)
C (2)
B
(1) NPN
E(3)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VCBO
Collector to base voltage
VCEO
Collector to emitter voltage
IB=0
VEBO
Emitter to base voltage
IC=0
IC Collector current-continuous
ICM (Icp)
Peak collector current
tp<5 ms
IB Base Current
PC Collector power dissipation
TC=25°C
Ta=25°C
TJ Junction temperature
TSTG
Storage temperature
VALUE
230
230
5
1
2
0.1
20
2.0
150
-55 to 150
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
ICBO
Collector cutoff current
VCBO=230V, lE=0
TC=25°C
TC=125°C
lEBO
Emitter cutoff current
VEBO=5V, lC=0
V(BR)CEO Collector to emitter breakdown voltage IB=0, Ic=100mA
VCE(sat)*
Collector to emitter saturation voltage IC=0.5A, IB=50mA
VBE
hFE*
FT
Base to emitter voltage
Forward current transfer ratio
(DC current gain)
Transition frequeucy
IC=0.5A, VCE=5V
IC=0.1A, VCE=5V
VCE=10V, IC=100mA
Cob Collector output capacitance
VCB=10V, IE=0, f=1MHz
*Pulsed: Pulse duration= 300μs, duty cycle= 1.5%.
Min.
230
100
Typ.
100
20
Max.
1.0
100
1.0
1.5
1.0
320
www.nellsemi.com
Page 1 of 3
UNIT
V
A
W
°C
UNIT
μA
V
MHz
pF
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