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PDF 19N10V Data sheet ( Hoja de datos )

Número de pieza 19N10V
Descripción 100V N-Channel MOSFET
Fabricantes UNISONIC TECHNOLOGIES　
Logotipo UNISONIC TECHNOLOGIES Logotipo



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No Preview Available ! 19N10V Hoja de datos, Descripción, Manual

UNISONIC TECHNOLOGIES CO., LTD
19N10V
100V N-Channel MOSFET
„ DESCRIPTION
The U TC 100V N-Chan nel enhancement mode po wer fiel d
effect transistors (MOSFET) are pro duced by UTC’s plan ar stripe,
DMOS techno logy which has bee n tail ored esp ecially in the
avalanche an d commutation mode to min imize on-state re sistance,
provide sup erior s witching p erformance, and withstand h igh en ergy
pulse. T hey are suited for l ow voltage ap plications s uch as aud io
amplifier, high efficiency switching DC/DC converters, and DC motor
control.
„ FEATURES
* RDS(ON) = 0.1Ω @VGS = 10 V
* Ultra low gate charge ( typical 19nC )
* Low reverse transfer Capacitance ( CRSS = typical 32pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
19N10VL-TM3-T
19N10VG-TM3-T
19N10VL-TN3-R
19N10VG-TN3-R
Package
TO-251
TO-252
Pin Assignment
123
GDS
GDS
Packing
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-914, A
http://www.Datasheet4U.com

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19N10V pdf
19N10V
„ TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
VGS
RG
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
RL VDS 90%
VDD
D.U.T.
10%
VGS
tD(ON)
tR
Power MOSFET
tD(OFF)
tF
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
10V
QGS
QG
QGD
Fig. 3A Gate Charge Test Circuit
L
VDS
VGS
Charge
Fig. 3B Gate Charge Waveform
10V
R
D
tp
D.U.T.
VDD
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-914, A

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