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PDF 10N60Z Data sheet ( Hoja de datos )
| Número de pieza | 10N60Z | |
| Descripción | 10A 600V N-CHANNEL POWER MOSFET | |
| Fabricantes | UNISONIC TECHNOLOGIES | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 10N60Z (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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UNISONIC TECHNOLOGIES CO., LTD
10N60Z
10A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UT C 10N 60Z is a hi gh voltage an d hi gh curre nt po wer
MOSFET, designe d to have better c haracteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This po wer MOSFET is
usually use d at high s peed s witching a pplications in po wer
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
FEATURES
* RDS(ON) = 0.75Ω@VGS =10V
* Low gate charge ( typical 44nC)
* Low CRSS ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N60ZL-TF1-T
10N60ZG-TF1-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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QW-R502-936,A
http://www.Datasheet4U.com
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10N60Z
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS 90%
Power MOSFET
Switching Test Circuit
10%
VGS
tD(ON)
tR
tD(OFF)
tF
Switching Waveforms
VGS
10V
QGS
QG
QGD
Gate Charge Test Circuit
Charge
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
BVDSS
IAS
VDD
ID(t)
tp
VDS(t)
Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-936,A
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 10N60Z.PDF ] | |
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