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PDF IRFS630 Data sheet ( Hoja de datos )

Número de pieza IRFS630
Descripción 200V/9A POWER MOSFET
Fabricantes TAITRON　
Logotipo TAITRON Logotipo



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No Preview Available ! IRFS630 Hoja de datos, Descripción, Manual

200V/9A POWER MOSFET
(N-Channel)
IRF630/IRFS630
200V/9A Power MOSFET (N-Channel)
General Description
• IRF630/IRFS630 are N-Channel enhancement mode power MOSFETs with
advanced technology. These power MOSFETs are designed for low voltage,
high speed power switching applications such as switching regulators, converters,
solenoid and relay drivers.
TO-220
• IRF630/IRFS630 are available in TO-220/TO-220F packages.
TO-220F
Features
• Dynamic dv/dt Rating
• Repetitive Avalanche Rated
• Fast switching capability
• Ease of Paralleling
• Simple Drive Requirements
• RoHS Compliance and Halogen free
Application
• DC to DC Converter
• Adapter
• SMPS Application.
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITF AX (800)-824-8329 (661)-257-6415
Rev. A/LX
Page 1 of 10
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IRFS630 pdf
200V/9A POWER MOSFET (N-Channel)
Typical Characteristics Curves
IRF630/IRFS630
Fig.1- On-Region Characteristics
Fig.2- Transconductance Variation Vs.Drain Current
and Temperature
Drain-Source Voltage VDS (V)
Fig.3- Drain Current Variation Vs. Gate Voltage and
Temperature
Drain Current ID (A)
Fig.4- Body Diode Forward Voltage Variation
Vs. Current and Temperature
Gate-Source Voltage VGS (V)
www.taitroncomponents.com
Body Diode Forward Voltage VSD (V)
Rev. A/LX
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