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PDF K3455 Data sheet ( Hoja de datos )
| Número de pieza | K3455 | |
| Descripción | MOSFET ( Transistor ) - 2SK3455 | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3455
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3455 is N-channel DMOS FET device that
features a low gate charge and excellent switching
characteristics, designed for high voltage applications
such as switching power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3455
Isolated TO-220
FEATURES
•Low gate charge
QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A)
•Gate voltage rating ±30 V
•Low on-state resistance
RDS(on) = 0.60 Ω MAX. (VGS = 10 V, ID = 6.0 A)
•Avalanche capability ratings
•Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note1
Total Power Dissipation (TA = 25°C)
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
500
±30
±12
±36
2.0
V
V
A
A
W
Total Power Dissipation (TC = 25°C) PT2 50 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg −55 to +150
Single Avalanche Current Note2
IAS 12
Single Avalanche Energy Note2
EAS 103
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
°C
A
mJ
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14757EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
©
2000
http://www.Datasheet4U.com
1 page  
2SK3455
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
90
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
ID(DC)
10 RDS(on) Limited
3 ms
10 ms
1 30 ms
100 ms
Power Dissipation Limited
ID(pulse) PW
1
100
ms
µs
= 10 µs
TC = 25˚C
0.1 Single Pulse
11 0
100 1000
VDS - Drain to Source Voltage - V
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 62.5˚C/W
10
Rth(ch-C) = 2.5˚C/W
1
0.1
0.01
0.001
10 µµ 100
1 m 10 m 100 m
1
PW - Pulse Width - s
Single Pulse
10 100 1000
Data Sheet D14757EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K3455.PDF ] | |
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