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PDF NP80N06PLG Data sheet ( Hoja de datos )

Número de pieza NP80N06PLG
Descripción MOS FIELD EFFECT TRANSISTOR
Fabricantes NEC 
Logotipo NEC Logotipo



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To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
http://www.Datasheet4U.com

1 page




NP80N06PLG pdf
NP80N06MLG, NP80N06NLG, NP80N06PLG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SY
MBOL
TEST CONDITIONS M
Zero Gate Voltage Drain Current
IDSS VDS = 60 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Gate to Source Threshold Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(th)
| yfs |
RDS(on)1
VDS = VGS, ID = 250 μA
VDS = 5 V, ID = 35 A
VGS = 10 V, ID = 40 A
NP80N06MLG, NP80N06NLG
IN. TYP. MAX.
1
±10
1.4 2.5
25 59
6.7 8.6
VGS = 10 V, ID = 40 A
NP80N06PLG
6.2 8.3
RDS(on)2
VGS = 4.5 V, ID = 35 A
NP80N06MLG, NP80N06NLG
8.4 13.3
VGS = 4.5 V, ID = 35 A
NP80N06PLG
7.6 1
3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage Note
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed test
Ciss
Coss
Crss f
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
VDS = 25 V,
VGS = 0 V,
= 1 MHz
VDD = 30 V, ID = 40 A,
VGS = 10 V,
RG = 0 Ω
VDD = 48 V,
VGS = 10 V,
ID = 80 A
IF = 80 A, VGS = 0 V
IF = 80 A, VGS = 0 V,
di/dt = 100 A/μs
4600
370
220
17
13
70
7
85
14
25
0.96
41
56
6900
560
400
37
33
140
18
128
1.5
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
UNIT
μA
μA
V
S
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
Data Sheet D19798EJ1V0DS
3

5 Page





NP80N06PLG arduino
NP80N06MLG, NP80N06NLG, NP80N06PLG
TAPE INFORMATION (NP80N06PLG)
There are two types (-E1B, -E2B) of taping depending on the direction of the device.
Draw-out side
MARKING INFORMATION
E1B TYPE
NEC
80N06
LG
Reel side
E2B TYPE
Pb-free plating marking
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Soldering Conditions
Infrared reflow
NP80N06PLG
Wave soldering
NP80N06MLG,
NP80N06NLG
Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Maximum temperature (Solder temperature): 260°C or below
Time: 10 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Partial heating
NP80N06MLG,
NP80N06NLG,
NP80N06PLG
Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Recommended
Condition Symbol
IR60-00-3
THDWS
P350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D19798EJ1V0DS
9

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