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PDF BAV74LT1G Data sheet ( Hoja de datos )
| Número de pieza | BAV74LT1G | |
| Descripción | Monolithic Dual Switching Diode | |
| Fabricantes | ON Semiconductor | |
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BAV74LT1G
Monolithic Dual
Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR 50 Vdc
Forward Current
IF 200 mAdc
Peak Forward Surge Current
IFM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
PD
(Note 1), TA = 25°C
225 mW
Derate above 25°C
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
http://onsemi.com
3
CATHODE
ANODE
1
2
ANODE
3
1
2
SOT−23
CASE 318
STYLE 9
MARKING DIAGRAM
JA M G
G
1
JA = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
BAV74LT1G
Package
SOT−23
(Pb−Free)
Shipping†
3000/Tape & Reel
BAV74LT3G
SOT−23 10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 5
1
Publication Order Number:
BAV74LT1/D
http://www.Datasheet4U.com
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BAV74LT1G.PDF ] | |
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