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PDF DRC3114E Data sheet ( Hoja de datos )
| Número de pieza | DRC3114E | |
| Descripción | Silicon NPN epitaxial planar type | |
| Fabricantes | PANASONIC | |
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DRC3114E
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA3114E
DRC9114E in SSSMini3 type package
Features
Low collector-emitter saturation voltage VCE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: NB
Packaging
DRC3114E0L Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
100
100
150
–55 to +150
Unit
V
V
mA
mW
°C
°C
1: Base
2: Emitter
3: Collector
Panasonic
JEITA
Code
R1
B
R2
SSSMini3-F2-B
SC-105AA
SOT-723
C
E
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Resistance value R1 10
R2 10
Min Typ Max
Collector-base voltage (Emitter open)
VCBO IC = 10 µA, IE = 0
50
Collector-emitter voltage (Base open)
VCEO IC = 2 mA, IB = 0
50
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0
0.1
Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0
0.5
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
0.5
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA
35
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.5 mA
0.25
Input voltage (ON)
VI(on) VCE = 0.2 V, IC = 5 mA
2.1
Input voltage (OFF)
VI(off) VCE = 5 V, IC = 100 µA
0.8
Input resistance
R1
–30% 10 +30%
Resistance ratio
R1 / R2
0.8 1.0 1.2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
kΩ
kΩ
Unit
V
V
µA
µA
mA
V
V
V
kΩ
Publication date: December 2012
Ver. DED
1
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DRC3114E0L
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DRC3114E.PDF ] | |
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