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PDF DMN4060SVT Data sheet ( Hoja de datos )

Número de pieza DMN4060SVT
Descripción 45V N-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes DIODES 
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No Preview Available ! DMN4060SVT Hoja de datos, Descripción, Manual

Product Summary
V(BR)DSS
45V
RDS(on) max
46mΩ @ VGS = 10V
62mΩ @ VGS = 4.5V
ID
TA = 25°C
4.8A
4.1A
DMN4060SVT
45V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low Input Capacitance
Lo w On-Resistance
Fast Switching Speed
Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
DC-D C Converters
Power management functions
Backlighting
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (approximate)
Drain
TSOT26
Top View
D1
D2
G3
6D
5D
4S
Top View
Pin Configuration
Gate
Body
Diode
Source
Equivalent Circuit
Ordering Information (Note 3)
Notes:
Part Number
DMN4060SVT-7
Case
TSOT26
Packaging
3,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
34D
34D = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
Date Code Key
Year
Code Y
Month
Code
2011
Jan Feb
12
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
DMN4060SVT
Document number: DS35702 Rev. 2 - 2
1 of 7
www.diodes.com
February 2012http://www.Datasheet4U.com
© Diodes Incorporated

1 page




DMN4060SVT pdf
4.0
3.5
3.0
ID = 1mA
2.5
ID = 250µA
2.0
1.5
1.0
0.5
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
10,000
1,000
100
10
TA = 150°C
TA = 125°C
TA =85°C
TA = -55°C TA =25°C
1
0 5 10 15 20 25 30 35 40 45 50
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Drain-Source Leakage Current vs. Voltage
VDS = 30V
ID = 4.3A
DMN4060SVT
20
16
12
TA = 25°C
8
4
0
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
Ciss
Coss
f = 1MHz
Crss
0 5 10 15 20 25 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Junction Capacitance
0 5 10 15 20 25
Qg, TOTAL GATE CHARGE (nC)
Fig. 14 Gate Charge
DMN4060SVT
Document number: DS35702 Rev. 2 - 2
5 of 7
www.diodes.com
February 2012
© Diodes Incorporated

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