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Datasheet FQPF47P06YDTU Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1FQPF47P06YDTUP-Channel QFET MOSFET

FQPF47P06 / FQPF47P06YDTU P-Channel MOSFET March 2013 -60 V, -30 A, 26 mΩ Description P-Channel QFET® MOSFET FQPF47P06 / FQPF47P06YDTU Features • -30 A, -60 V, RDS(on)=26 mΩ(Max.) @VGS=-10 V, ID=-15 A • Low Gate Charge (Typ. 84 nC) • Low Crss (Typ. 320 pF) • 100% Avalanche Tested •
Fairchild Semiconductor
Fairchild Semiconductor
mosfet


FQP Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1FQP10N20200V N-Channel MOSFET

   QFET   & & & & & & '(%)((*+,( -.Ω/*,'(* 0   1 '- 2 3 01 '-3     '((4 !  5 !!$  "                 
Fairchild Semiconductor
Fairchild Semiconductor
mosfet
2FQP10N20200V N-Channel MOSFET

   QFET   & & & & & & '(%)((*+,( -.Ω/*,'(* 0   1 '- 2 3 01 '-3     '((4 !  5 !!$  "                 
Fairchild Semiconductor
Fairchild Semiconductor
mosfet
3FQP10N20200V LOGIC N-Channel MOSFET

   QFET   & & & & & & '(%)((*+,( -.Ω/*,'(* 0   1 '- 2 3 01 '-3     '((4 !  5 !!$  "                 
Fairchild Semiconductor
Fairchild Semiconductor
mosfet
4FQP10N20C200V N-Channel MOSFET

FQP10N20C/FQPF10N20C QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on
Fairchild Semiconductor
Fairchild Semiconductor
mosfet
5FQP10N20L200V LOGIC N-Channel MOSFET

FQP10N20L December 2000 QFET FQP10N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state
Fairchild Semiconductor
Fairchild Semiconductor
mosfet
6FQP10N50CFN-Channel MOSFET

FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET December 2006 FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features • 10A, 500V, RDS(on) = 0.61 Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 16pF) • Fast switching • 100% avalanche tested • Improved dv/dt c
Fairchild Semiconductor
Fairchild Semiconductor
mosfet
7FQP10N60N-Channel MOSFET

FQP10N60-FQPF10N60 600V,10A N-Channel MOSFET General Description Product Summary The FQP10N60 & FQPF10N60 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss
Oucan Semi
Oucan Semi
mosfet



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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