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Número de pieza | BAS16N3 | |
Descripción | High speed switching diode | |
Fabricantes | CYStech Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BAS16N3 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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High –speed switching diode
BAS16N3
Spec. No. : C303N3-A
Issued Date : 2005.12.02
Revised Date : 2013.09.27
Page No. : 1/6
Description
The BAS16N3 is a high-speed switching diode fabricated in planar technology, and encapsulated in
a small SOT-23 plastic SMD package.
Equivalent Circuit
Outline
BAS16N3
21
SOT-23
Cathode
3
1:Anode
2:Not Connected
3:Cathode
Anode
NC
Features
• Small plastic SMD package
• High switching speed: max. 4ns
• Continuous reverse voltage: max. 100V
• Repetitive peak reverse voltage: max. 110V
• Repetitive peak forward current: max. 500mA.
Applications
• High-speed switching in hybrid thick and thin-film circuits.
Ordering Information
Device
BAS16N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BAS16N3
CYStek Product Specification
http://www.Datasheet4U.com
1 page CYStech Electronics Corp.
Spec. No. : C303N3-A
Issued Date : 2005.12.02
Revised Date : 2013.09.27
Page No. : 5/6
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BAS16N3
CYStek Product Specification
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BAS16N3.PDF ] |
Número de pieza | Descripción | Fabricantes |
BAS16N3 | High speed switching diode | CYStech Electronics |
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