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PDF NTF2955 Data sheet ( Hoja de datos )
| Número de pieza | NTF2955 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTF2955, NVF2955
Power MOSFET
−60 V, −2.6 A, Single P−Channel SOT−223
Features
• Design for low RDS(on)
• Withstands High Energy in Avalanche and Commutation Modes
• AEC−Q101 Qualified − NVF2955
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Power Supplies
• PWM Motor Control
• Converters
• Power Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Drain−to−Source Voltage
VDSS
Gate−to−Source Voltage
VGS
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
TA = 85°C
ID
Power Dissipation
(Note 1)
Steady TA = 25°C
State
PD
Value
−60
±20
−2.6
−2.0
2.3
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
−1.7
−1.3
1.0
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 25 V, VG = 10 V, IPK = 6.7 A,
L = 10 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
IDM
TJ,
TSTG
EAS
−17
−55 to
175
225
TL 260
Unit
V
V
A
W
A
W
A
°C
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Tab (Drain) − Steady State (Note 2) RqJC
14
Junction−to−Ambient − Steady State (Note 1)
RqJA
65 °C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1 in. pad size (Cu. area = 1.127
in2 [1 oz] including traces)
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu. area = 0.341 in2)
http://onsemi.com
V(BR)DSS
−60 V
RDS(on) TYP
145 mW @ −10 V
P−Channel
D
ID MAX
−2.6 A
G
S
4
123
SOT−223
CASE 318E
STYLE 3
MARKING DIAGRAM AND
PIN ASSIGNMENT
4 Drain
1
Gate
AYW
2955G
G
2
Drain
3
Source
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTF2955T1G
SOT−223 1000 /Tape & Reel
(Pb−Free)
NVF2955T1G
SOT−223 1000/ Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
February, 2014 − Rev. 7
1
Publication Order Number:
NTF2955/D
1 page  
NTF2955, NVF2955
100
D = 0.5
0.2
10 0.1
0.05
1
0.02
0.01
0.1
0.01 Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
Figure 13. Thermal Response
Cu area − 727 mm2, 1 oz. thick traces
1 10 100 1000
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTF2955.PDF ] | |
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