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PDF Y45KKD Data sheet ( Hoja de datos )

Número de pieza Y45KKD
Descripción HIGH FREQUENCY THYRISTOR
Fabricantes Techsem 
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No Preview Available ! Y45KKD Hoja de datos, Descripción, Manual

Y45KKD
HIGH F REQUENCY THYRISTOR
Features
Int erdigitated amplifying gates
Fast turn-on and high di/dt
Low switching losses
Short turn-off time
Hermetic metal cases with ceramic insulators
Typical Applications
Ind uctive heating
E lectronic welders
S elf-commutated inverters
AC motor speed control
General power switching applications
IT(AV)
VDRM/VRRM
tq
ITSM
1010A
1200~1600V
18~36µs
11kA
SYMBOL CHAR
ACTERISTIC
TEST CONDITIONS
Tj(C)
VALUE
Min T ype Max
UNIT
IT(AV) Mean
on-state current
180half sine wave 50Hz
Double side cooled,
TC=55C
TC=85C
old model
125
1010
700
600
A
VDRM
VRRM
IDRM
IRRM
ITSM S
I2t I
VTO Th
rT
VTM P
dv/dt
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak off-state current
Repetitive peak reverse current
urge on-state current
2T for fusing coordination
reshold voltage
On-state slop resistance
eak on-state voltage
Critical rate of rise of off-state voltage
di/dt Critical rate of rise of on-state current
Qrr R
ecovery charge
tq Circuit commutated turn-off time
IGT Gate trigger current
VGT Gate
trigger voltage
IH H olding current
VGD N
Rth(j-c)
Rth(c-h)
on-trigger gate voltage
Thermal resistance
Junction to case
Thermal resistance
case to heat sink
Fm Moun
ting force
Tstg S
tored temperature
Wt We
ight
Outline
VDRM&VRRM ,tp=10ms
VDsM&VRsM= VDRM&VRRM+100V
VD= VDRM
VR= VRRM
10ms half sine wave
VR=0.6VRRM
ITM=1800A, F=21kN
VDM=0.67VDRM 125
VDM= 67%VDRM t o 1600A,
Gate pulse tr 0.5μs IGM=1.5A
ITM=1000A,tp=2000µs,
di/dt=-60A/µs,VR=50V
ITM=800A,tp=1000µs, VR =50V
dv/dt=30V/µs ,di/dt=-20A/µs
VA=12V, IA=1A 25
VDM=67%VDRM 125
At 1800 sine, double side cooled
Clamping force 21kN
KT44cT
125 1200
1600
V
125 50 mA
11 kA
125
605 A2s*103
1. 70
V
125
0.48 m
125 2.56 V
200 V/μs
125
1500
A/μs
125 83
100 µC
125 18
36 µs
30 250 mA
0.8 3.0 V
20 400 mA
0.3 V
0.024
0.006
C /W
18
-40
3800
25
140
kN
C
g
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