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PDF 22V10 Data sheet ( Hoja de datos )

Número de pieza 22V10
Descripción HighPerformanceE2CMOSPLDGenericArrayLogic
Fabricantes LatticeSemiconductor 
Logotipo LatticeSemiconductor Logotipo



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SpecificatioGnsAGLA2L222VV1100
High Performance E2CMOS PLD
Generic Array Logic™
Features
Functional Block Diagram
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY
— 4 ns Maximum Propagation Delay
— Fmax = 250 MHz
— 3.5 ns Maximum from Clock Input to Data Output
— UltraMOS® Advanced CMOS Technology
• ACTIVE PULL-UPS ON ALL PINS
• COMPATIBLE WITH STANDARD 22V10 DEVICES
— Fully Function/Fuse-Map/Parametric Compatible
with Bipolar and UVCMOS 22V10 Devices
• 50% to 75% REDUCTION IN POWER VERSUS BIPOLAR
— 90mA Typical Icc on Low Power Device
— 45mA Typical Icc on Quarter Power Device
• E2 CELL TECHNOLOGY
— Reconfigurable Logic
— Reprogrammable Cells
— 100% Tested/100% Yields
— High Speed Electrical Erasure (<100ms)
— 20 Year Data Retention
• TEN OUTPUT LOGIC MACROCELLS
— Maximum Flexibility for Complex Logic Designs
• PRELOAD AND POWER-ON RESET OF REGISTERS
— 100% Functional Testability
• APPLICATIONS INCLUDE:
— DMA Control
— State Machine Control
— High Speed Graphics Processing
— Standard Logic Speed Upgrade
• ELECTRONIC SIGNATURE FOR IDENTIFICATION
ESCRIPTION
Description
I/CLK
I
I
I
I
I
I
I
I
I
I
I
Pin Configuration
RESET
8
OLMC
10
OLMC
12
OLMC
14
OLMC
16
OLMC
16
OLMC
14
OLMC
12
OLMC
10
OLMC
8
OLMC
PRESET
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
The GAL22V10, at 4ns maximum propagation delay time, combines
a high performance CMOS process with Electrically Erasable (E2)
floating gate technology to provide the highest performance avail-
able of any 22V10 device on the market. CMOS circuitry allows
the GAL22V10 to consume much less power when compared to
bipolar 22V10 devices. E2 technology offers high speed (<100ms)
erase times, providing the ability to reprogram or reconfigure the
device quickly and efficiently.
The generic architecture provides maximum design flexibility by
allowing the Output Logic Macrocell (OLMC) to be configured by
the user. The GAL22V10 is fully function/fuse map/parametric com-
patible with standard bipolar and CMOS 22V10 devices.
Unique test circuitry and reprogrammable cells allow complete AC,
DC, and functional testing during manufacture. As a result, Lat-
tice Semiconductor delivers 100% field programmability and func-
tionality of all GAL products. In addition, 100 erase/write cycles and
data retention in excess of 20 years are specified.
PLCC
4
I5
2 28 26
25 I/O/Q
I I/O/Q
I7
NC
GAL22V10
23 I/O/Q
NC
I 9 Top View 21 I/O/Q
I I/O/Q
I 11
19 I/O/Q
12 14 16 18
DIP
I/CLK 1
I
24 Vcc
I/O/Q
I I/O/Q
I GAL
I 22V10
I6
I/O/Q
I/O/Q
I/O/Q
I 18 I/O/Q
I I/O/Q
I I/O/Q
I I/O/Q
I I/O/Q
GND 12
13 I
Copyright © 2000 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject
to change without notice.
LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A.
Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com
August 2000
22v10_06
1

1 page




22V10 pdf
Specifications GAL22V10
GAL22V10 Logic Diagram / JEDEC Fuse Map
DIP (PLCC) Package Pinouts
1 (2)
0 4 8 12 16 20 24 28 32 36 40
0000
0044
.
.
.
0396
8
2 (3)
3 (4)
4 (5)
5 (6)
6 (7)
7 (9)
8 (10)
9 (11)
10 (12)
11 (13)
0440
.
.
.
.
0880
0924
.
.
.
.
.
1452
1496
.
.
.
.
.
.
2112
2156
.
.
.
.
.
.
.
2860
2904
.
.
.
.
.
.
.
3608
3652
.
.
.
.
.
.
4268
4312
.
.
.
.
.
4840
4884
.
.
.
.
5324
5368
.
.
.
5720
5764
5828, 5829 ... Electronic Signature ... 5890, 5891
Byte 7 Byte 6 Byte 5 Byte 4 Byte 3 Byte 2 Byte 1 Byte 0
ML
SS
BB
10
12
14
16
16
14
12
10
8
ASYNCHRONOUS RESET
(TO ALL REGISTERS)
OLMC
S0
5808
S1
5809
23 (27)
OLMC
S0
5810
S1
5811
22 (26)
OLMC
S0
5812
S1
5813
21 (25)
OLMC
S0
5814
S1
5815
20 (24)
OLMC
S0
5816
S1
5817
19 (23)
OLMC
S0
5818
S1
5819
18 (21)
OLMC
S0
5820
S1
5821
17 (20)
OLMC
S0
5822
S1
5823
16 (19)
OLMC
S0
5824
S1
5825
15 (18)
OLMC
S0
5826
S1
5827
SYNCHRONOUS PRESET
(TO ALL REGISTERS)
14 (17)
13 (16)
5

5 Page





22V10 arduino
SpSepceifcicifaictaiotinosnsGGALA2L2V21V01B0
Absolute Maximum Ratings1
Supply voltage VCC ....................................... -0.5 to +7V
Input voltage applied ........................... -2.5 to VCC +1.0V
Off-state output voltage applied .......... -2.5 to VCC +1.0V
Storage Temperature ................................. -65 to 150°C
Ambient Temperature with
Power Applied ......................................... -55 to 125°C
1. Stresses above those listed under the Absolute Maximum
Ratingsmay cause permanent damage to the device. These
are stress only ratings and functional operation of the device
at these or at any other conditions above those indicated in
the operational sections of this specification is not implied
(while programming, follow the programming specifications).
Recommended Operating Conditions
Commercial Devices:
Ambient
Temperature
(T )
A
.............................
0
to
+75°C
Supply voltage (VCC)
with Respect to Ground ..................... +4.75 to +5.25V
Industrial Devices:
Ambient Temperature (TA) ............................ -40 to 85°C
Supply voltage (V )
CC
with Respect to Ground ..................... +4.50 to +5.50V
DC Electrical Characteristics
Over Recommended Operating Conditions (Unless Otherwise Specified)
SYMBOL PARAMETER
CONDITION
MIN. TYP.3 MAX. UNITS
VIL Input Low Voltage
Vss 0.5
VIH Input High Voltage
2.0
IIL1 Input or I/O Low Leakage Current 0V VIN VIL (MAX.)
IIH Input or I/O High Leakage Current 3.5V VIN VCC
VOL
Output Low Voltage
IOL = MAX. Vin = VIL or VIH
VOH
Output High Voltage
IOH = MAX. Vin = VIL or VIH
2.4
IOL Low Level Output Current
IOH High Level Output Current
IOS2
Output Short Circuit Current
VCC = 5V
VOUT = 0.5V
T
A
=
25°C
30
COMMERCIAL
ICC Operating Power VIL = 0.5V VIH = 3.0V
L-7
Supply Current
ftoggle = 15MHz Outputs Open
L-10/-15
L-25
Q-15/-25
INDUSTRIAL
ICC Operating Power VIL = 0.5V VIH = 3.0V
L-15/-20/-25
Supply Current
ftoggle = 15MHz Outputs Open
90
90
75
45
90
0.8
Vcc+1
100
10
0.5
16
3.2
130
140
130
90
55
150
V
V
µA
µA
V
V
mA
mA
mA
mA
mA
mA
mA
mA
1) The leakage current is due to the internal pull-up on all pins. See Input Buffer section for more information.
2) One output at a time for a maximum duration of one second. Vout = 0.5V was selected to avoid test problems caused by tester
ground degradation. Characterized but not 100% tested.
3) Typical values are at Vcc = 5V and TA = 25 °C
11

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