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Número de pieza | FDPF20N50 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDPF20N50 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! FDP20N50 / FDPF20N50 / FDPF20N50T
N-Channel UniFETTM MOSFET
500 V, 20 A, 230 mΩ
November 2013
Features
• RDS(on) = 200 mΩ (Typ.) @ VGS = 10 V, ID = 10 A
• Low Gate Charge (Typ. 45.6 nC)
• Low Crss (Typ. 27 pF)
• 100% Avalanche Tested
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFETTM MOSFET is F airchild Semiconductor ’s high volt age
MOSFET family based on planar stripe and D MOS technology.
This MOSFET is tailored to reduce on-st ate resistance, and to
provide be tter switching performance and higher avalanche
energy strengt h. This device family is suit able for switching
power convert er applicatio ns such as power factor corr ection
(PFC), flat p anel display (FPD) T V pow er, ATX and electronic
lamp ballasts.
D
GDS
TO-220
GDS
TO-220F
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
S
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP20N50
20
12.9
80
500
±30
1110
20
25
4.5
FDPF20N50 /
FDPF20N50T
20 *
12.9 *
80 *A
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
250 38.5
2.0 0.3
-55 to +150
300
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDP20N50
0.5
62.5
FDPF20N50/
FDPF20N50T
3.3
62.5
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
©2006 Fairchild Semiconductor Corporation
FDP20N50 / FDPF20N50 / FDPF20N50T Rev. C1
1
www.fairchildsemi.com
http://www.Datasheet4U.com
1 page Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve - FDP20N50
100
D = 0 .5
1 0 -1
1 0 -2
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
PDM
t1
t2
* N o te s :
1 . Z θ J C ( t ) = 0 .5 o C / W M a x .
2 . D u ty F a c to r, D = t1/t2
3 . T J M - T C = P DM * Z θ JC (t )
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
101
Figure 11-2. Transient Thermal Response Curve - FDPF20N50
100
1 0 -1
D = 0.5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
sin g le p u lse
PDM
t1
t2
* N o te s :
1 . Z θ J C (t ) = 3 . 3 o C/ W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T JM - T C = P DM * Z θ JC (t )
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t 1 , S q uar e W av e P ul s e D ur at ion [ s ec ]
101
©2006 Fairchild Semiconductor Corporation
FDP20N50 / FDPF20N50 / FDPF20N50T Rev. C1
5
www.fairchildsemi.com
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet FDPF20N50.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDPF20N50 | N-Channel MOSFET | Fairchild Semiconductor |
FDPF20N50FT | N-Channel MOSFET | Fairchild Semiconductor |
FDPF20N50T | N-Channel MOSFET | Fairchild Semiconductor |
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