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Número de pieza | 20MT120UF | |
Descripción | UltraFastNPTIGBT | |
Fabricantes | InternationalRectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 20MT120UF (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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"FULL-BRIDGE" IGBT MTP
I27124 rev. D 02/03
20MT120UF
UltraFast NPT IGBT
Features
• UltraFast Non Punch Through (NPT)
Technology
• Positive VCE(ON)Temperature Coefficient
• 10µs Short Circuit Capability
• HEXFRED TM Antiparallel Diodes with
UltraSoft Reverse Recovery
• Low Diode VF
• Square RBSOA
• Aluminum Nitride DBC
• Very Low Stray Inductance Design for
High Speed Operation
• UL approved (File E78996)
Benefits
• Optimized for Welding, UPS and SMPS
Applications
• Rugged with UltraFast Performance
• Benchmark Efficiency above 20KHz
• Outstanding ZVS and Hard Switching
Operation
• Low EMI, requires Less Snubbing
• Excellent Current Sharing in Parallel
Operation
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal
Resistance
Absolute Maximum Ratings
Parameters
VCES
IC
I CM
I LM
IF
I FM
VGE
VISOL
PD
Collector-to-Emitter Breakdown Voltage
Continuos Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 106°C
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 106°C
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation (only IGBT) @ TC = 25°C
@ TC = 100°C
VCES = 1200V
IC = 40A
TC = 25°C
MMTP
Max
1200
40
20
100
100
25
100
± 20
2500
240
96
Units
V
A
V
W
www.irf.com
1
1 page 20MT120UF
I27124 rev. D 02/03
100
VGE = 18V
VGE = 15V
80 VGE = 12V
VGE = 10V
VGE = 8.0V
60
40
20
0
0 2 4 6 8 10
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
100
VGE = 18V
VGE = 15V
80 VGE = 12V
VGE = 10V
VGE = 8.0V
60
40
20
0
0 2 4 6 8 10
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
100
VGE = 18V
VGE = 15V
80 VGE = 12V
VGE = 10V
VGE = 8.0V
60
40
20
0
0246
VCE (V)
8 10
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
www.irf.com
120
-40°C
100 25°C
125°C
80
60
40
20
0
0.0 1.0 2.0 3.0 4.0 5.0
VF (V)
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
5
5 Page 20MT120UF
I27124 rev. D 02/03
L
L
0
DUT
VCC 80 V
1K
DUT
1000V
Rg
Fig. CT.1 - Gate Charge Circuit (turn-off)
Fig. CT.2 - RBSOA Circuit
Driver
D
C
DUT
900V
diode clamp /
DUT
- 5V
Rg
L
DUT /
DRIVER
VCC
Fig. CT.3 - S.C. SOA Circuit
www.irf.com
Fig. CT.4 - Switching Loss Circuit
11
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet 20MT120UF.PDF ] |
Número de pieza | Descripción | Fabricantes |
20MT120UF | UltraFastNPTIGBT | InternationalRectifier |
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