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PDF 2N2222A Data sheet ( Hoja de datos )
| Número de pieza | 2N2222A | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | Central | |
| Logotipo |  |
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 1. - 75V, Silicon NPN Transistor  Hay una vista previa y un enlace de descarga de 2N2222A (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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2N2221A
2N2222A
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2221A and
2N2222A are silicon NPN epitaxial planar transistors
designed for small signal, general purpose switching
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
ΘJA
ΘJC
75
40
6.0
800
500
1.8
-65 to +200
350
97
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=60V
10 nA
ICBO
VCB=60V, TA=150°C
10 μA
ICEV
VCE=60V, VEB=3.0V
10 nA
IEBO
VEB=3.0V
10 nA
BVCBO
IC=10μA
75
V
BVCEO
IC=10mA
40
V
BVEBO
IE=10μA
6.0
V
VCE(SAT)
IC=150mA, IB=15mA
0.3 V
VCE(SAT)
IC=500mA, IB=50mA
1.0 V
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
V
VBE(SAT)
IC=500mA, IB=50mA
2.0
2N2221A
2N2222A
V
MIN MAX
MIN MAX
hFE VCE=10V, IC=0.1mA
20 -
35 -
hFE VCE=10V, IC=1.0mA
25 -
50 -
hFE VCE=10V, IC=10mA
35 -
75 -
hFE VCE=10V, IC=10mA, TA=-55°C
15 -
35 -
hFE VCE=10V, IC=150mA
40 120
100 300
hFE VCE=1.0V, IC=150mA
20 -
50 -
hFE VCE=10V, IC=500mA
25 -
40 -
R5 (5-December 2013)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N2222A.PDF ] | |
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