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Número de pieza | TK09H90A | |
Descripción | Field Effect Transistor | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TK09H90A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! TK09H90A
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type(π-MOS IV)
TK09H90A
Switching Regulator Applications
Unit: mm
z Low drain−source ON resistance : RDS (ON) = 1.0Ω (typ.)
z High forward transfer admittance : |Yfs| = 6S (typ.)
z Low leakage current
: IDSS = 100 µA (max) (VDS = 720V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Sy
mbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC ( Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
( Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS 90
VDGR
VGSS
ID
IDP 27
PD
EAS 77
IAR
EAR
Tch
Tstg
0
900
±30
9
150
8
9
15
150
−55~150 °
V
V
V
A
A
W
mJ
A
mJ
°C
C
1: GATE
2: DRAIN (HEAT SINK)
3: SOURCE
JEDEC
―
JEITA
―
TOSHIBA 2-
16K1A
Weight: 3.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic Sy
mbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c) 0
Rth (ch−a) 50
.833
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 17.6 mH, RG = 25 Ω, IAR = 9 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
1 2006-11-13
http://www.Datasheet4U.com
1 page TK09H90A
rth – tw
10
1
Duty=0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
Single pulse
0.001
10μ
100μ
1m
10m
PDM
t
T
Duty = t/T
Rth (ch-c) = 0.833°C/W
100m
1
10
Pulse width t w (s )
Safe operating area
100
ID max (Pulse) *
10 ID max (Continuous)
100 μs *
1 ms *
1
DC operation
Tc = 25°C
0.1
* Single nonrepetitive pulse
Tc = 25°C
Curves m ust be der ated
linearly wi th i ncrease i n
temperature.
0.01
1
10 100
VDSS max
100
Drain−source voltage VDS (V)
0
EAS – Tch
1000
800
600
400
200
0
25
50
75
100 12
5
150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 90 V, L = 17.6 mH
Wave form
ΕAS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2006-11-13
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet TK09H90A.PDF ] |
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