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PDF TK09H90A Data sheet ( Hoja de datos )

Número de pieza TK09H90A
Descripción Field Effect Transistor
Fabricantes Toshiba 
Logotipo Toshiba Logotipo



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No Preview Available ! TK09H90A Hoja de datos, Descripción, Manual

TK09H90A
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type(π-MOS IV)
TK09H90A
Switching Regulator Applications
Unit: mm
z Low drainsource ON resistance : RDS (ON) = 1.0(typ.)
z High forward transfer admittance : |Yfs| = 6S (typ.)
z Low leakage current
: IDSS = 100 µA (max) (VDS = 720V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Sy
mbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC ( Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
( Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS 90
VDGR
VGSS
ID
IDP 27
PD
EAS 77
IAR
EAR
Tch
Tstg
0
900
±30
9
150
8
9
15
150
55~150 °
V
V
V
A
A
W
mJ
A
mJ
°C
C
1: GATE
2: DRAIN (HEAT SINK)
3: SOURCE
JEDEC
JEITA
TOSHIBA 2-
16K1A
Weight: 3.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic Sy
mbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc) 0
Rth (cha) 50
.833
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 17.6 mH, RG = 25 , IAR = 9 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
1 2006-11-13
http://www.Datasheet4U.com

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TK09H90A pdf
TK09H90A
rth – tw
10
1
Duty=0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
Single pulse
0.001
10μ
100μ
1
10
PDM
t
T
Duty = t/T
Rth (ch-c) = 0.833°C/W
100
1
10
Pulse width t w (s )
Safe operating area
100
ID max (Pulse) *
10 ID max (Continuous)
100 μs *
1 ms *
1
DC operation
Tc = 25°C
0.1
* Single nonrepetitive pulse
Tc = 25°C
Curves m ust be der ated
linearly wi th i ncrease i n
temperature.
0.01
1
10 100
VDSS max
100
Drainsource voltage VDS (V)
0
EAS – Tch
1000
800
600
400
200
0
25
50
75
100 12
5
150
Channel temperature (initial) Tch (°C)
15 V
15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25
VDD = 90 V, L = 17.6 mH
Wave form
ΕAS
=
1
2
L
I2
⎜⎜⎝⎛
BVDSS
BVDSS VDD
⎟⎟⎠⎞
5 2006-11-13

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