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PDF P10NK60Z Data sheet ( Hoja de datos )
| Número de pieza | P10NK60Z | |
| Descripción | STP10NK60Z | |
| Fabricantes | ST Microelectronics | |
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STB10NK60Z, STP10NK60Z,
STP10NK60ZFP, STW10NK60Z
N-channel 600 V, 0.65 Ω typ., 10 A SuperMESH™ Power MOSFET
in I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packages
Datasheet − production data
Features
TAB
Type
STB10NK60Z-1
STB10NK60ZT4
STP10NK60Z
STP10NK60ZFP
STW10NK60Z
VDSS
600 V
600 V
600 V
600 V
600 V
RDS(on)
max
ID
Pw
< 0.75 Ω 10 A 115 W
< 0.75 Ω 10 A 115 W
< 0.75 Ω 10 A 115 W
< 0.75 Ω 10 A 35 W
< 0.75 Ω 10 A 156 W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Zener-protected
Applications
■ Switching applications
I2PAK
TAB
123
TAB
3
2
1
TO-220
3
1
D2PAK
3
2
1
TO-220FP
3
2
1
TO-247
Figure 1. Internal schematic diagram
Description
These devices are N-channel Zener-protected
Power MOSFET developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well-
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Table 1. Device summary
Order codes
Marking
STB10NK60Z-1
B10NK60Z
STB10NK60ZT4
B10NK60Z
STP10NK60Z
P10NK60Z
STP10NK60ZFP
P10NK60ZFP
STW10NK60Z
W10NK60Z
Package
I²PAK
D²PAK
TO-220
TO-220FP
TO-247
Packaging
Tube
Tape and reel
Tube
Tube
Tube
November 2012
This is information on a product in full production.
Doc ID 8526 Rev 11
1/24
www.st.com
24
http://www.Datasheet4U.com
1 page  
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z
2 Electrical
characteristics
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage drain
current (VGS = 0)
Gate body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on-
resistance
VDS = 600 V,
VDS = 600 V, TC=125 °C
VGS = ± 20 V
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 4.5 A
Min. Typ. Max. Unit
600 V
1 µA
50 µA
±10 µA
3 3.75 4.5 V
0.65 0.75 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Forward
transconductance
VDS =15 V, ID = 4.5 A
7.8 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Coss
(2)
eq
Equivalent output
capacitance
VDS =25 V, f=1 MHz, VGS=0
VGS=0, VDS =0 to 480 V
-
1370
156
37
90
pF
pF
pF
pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=480 V, ID = 8 A
VGS =10 V (see Figure 20)
50 70 nC
10 nC
25 nC
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80%
Doc ID 8526 Rev 11
5/24
5 Page 
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 10.
DIM.
A
A1
b
b1
c
c2
D
e
e1
E1
L1
L1
L2
I²PAK (TO-262) mechanical data
min.
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
0
3
3.50
1.27
mm.
typ
max.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
3.93
1.40
Doc ID 8526 Rev 11
11/24
11 Page | ||
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| PDF Descargar | [ Datasheet P10NK60Z.PDF ] | |
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