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PDF VSKDS409-150 Data sheet ( Hoja de datos )
| Número de pieza | VSKDS409-150 | |
| Descripción | Schottky Rectifier ( Diode ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
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VSKDS409/150
Vishay Semiconductors
ADD-A-PAK Generation VII
Power Modules Schottky Rectifier, 200 A
ADD-A-PAK
PRODUCT SUMMARY
IF(AV)
200 A
MECHANICAL DESCRIPTION
The ADD-A-PAK generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Low thermal resistance
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
• High surge capability
• Easy mounting on heatsink
ELECTRICAL DESCRIPTION
The VSKDS409/150 Schottky rectifier doubler module has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
Rectangular waveform
IFSM
tp = 5 μs sine
VF 200 Apk, TJ = 125 °C
TJ Range
VALUES
200
150
20 000
0.85
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum static peak reverse voltage
SYMBOL
VR
VRRM
VSKDS409/150
150
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
Repetitive avalanche current
Maximum dynamic peak reverse voltage
EAS
IAR
VAV
TEST CONDITIONS
50 % duty cycle at TC = 105 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
TJ = 25 °C, IAS = 1.8 A, L = 10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
TJ = 25 °C, IAS = 1.8 A, L = 10 mH
VALUES
200
20 000
2300
15
1
170
UNITS
A
mJ
A
V
Document Number: 94649
Revision: 13-Jan-11
For technical questions, contact: [email protected]
www.vishay.com
1
http://www.Datasheet4U.com
1 page  
VSKDS409/150
ADD-A-PAK Generation VII
Vishay Semiconductors
Power Modules Schottky Rectifier, 200 A
ORDERING INFORMATION TABLE
Device code
VS KD S 40 9
/ 150
1 2 3 45
6
1 - Vishay Semiconductors product
2 - Circuit configuration:
KD = ADD-A-PAK - 2 diodes in series
3 - S = Schottky diode
4 - Average current rating (40 = 400 A) (1)
5 - Product silicon identification
6 - Voltage rating (150 = 150 V)
Note
(1) For KD configuration average current rating per module is 200 A
CIRCUIT CONFIGURATION
(1) ~
(2) +
Dimensions
(3) -
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95369
Document Number: 94649
Revision: 13-Jan-11
For technical questions, contact: [email protected]
www.vishay.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet VSKDS409-150.PDF ] | |
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