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Número de pieza | FDP8N50NZF | |
Descripción | N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDP8N50NZF (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! FDP8N50NZF / FDPF8N50NZF
N-Channel MOSFET
500V, 7A, 1Ω
February 2012
UniFET-IITM
Features
• RDS(on) = 0.85Ω ( Typ.) @ VGS = 10V, ID = 3.25A
• Low Gate Charge ( Typ. 14nC)
• Low Crss ( Typ. 5pF)
• Fast Switching
• 100% Avalanche Tested
• Improve dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Description
This N-Channel enhancement mode power field effect transistors
are produced using Fairchild's proprietary, planar stripe, DMOS
technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
D
G
GDS
TO-220
FDP Series
GDS
TO-220F
FDPF Series
(potted)
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
FDP8N50NZF FDPF8N50NZF
500
±25
7 7*
4.2 4.2*
(Note 1)
28
28*
(Note 2)
93
(Note 1)
7
(Note 1)
13
(Note 3)
20
130 40
1 0.32
-55 to +150
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
300 oC
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP8N50NZF FDPF8N50NZF Units
0.96
0.5
3.1
- oC/W
62.5 62.5
©2012 Fairchild Semiconductor Corporation
FDP8N50NZF / FDPF8N50NZF Rev. C0
1
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
1 page Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP8N50NZF / FDPF8N50NZF Rev. C0
5
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet FDP8N50NZF.PDF ] |
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