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PDF FDPF52N20T Data sheet ( Hoja de datos )
| Número de pieza | FDPF52N20T | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDP52N20 / FDPF52N20T
N-Channel MOSFET
200V, 52A, 0.049Ω
Features
• RDS(on) = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A
• Low gate charge ( Typ. 49nC)
• Low Crss ( Typ. 66pF)
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant
October 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
D
G DS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP52N20 FDPF52N20T
200
±30
52 52*
33 33*
208 208*
2520
52
35.7
4.5
357 38.5
2.86 0.3
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP52N20
0.35
0.5
62.5
FDPF52N20T
3.3
-
62.5
Units
oC/W
©2007 Fairchild Semiconductor Corporation
FDP52N20 / FDPF52N20T Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
1 page  
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve - FDP52N20
D = 0 .5
1 0 -1
0.2
0.1
0.05
0.02
10-2 0.01
single pulse
PDM
* Notes :
t1
t2
1. ZθJC(t) = 0.35 0C /W M ax.
2. D uty Factor, D =t1/t2
3. TJM - TC = PDM * ZθJC(t)
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, Square W ave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve - FDPF52N20T
D=0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
10-2
10-5
single pulse
PDM
* Notes :
t1
t2
1. ZθJC(t) = 3.3 0C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-4
1 0 -3
1 0 -2
10-1
100
t1, Square W ave Pulse Duration [sec]
101
FDP52N20 / FDPF52N20T Rev. A 5 www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FDPF52N20T.PDF ] | |
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