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PDF FCH35N60 Data sheet ( Hoja de datos )
| Número de pieza | FCH35N60 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FCH35N60
N-Channel SuperFET® MOSFET
600 V, 35 A, 98 mΩ
March 2013
Features
• 650 V @ TJ = 150°C
• Typ.RDS(on) = 79 mΩ
• Ultra Low Gate Charge ( Typ. Qg = 139 nC )
• Low Effective Output Capacitance (Typ. Coss.eff = 340 pF)
• 100% Avalanche Tested
Application
• Solar Inverter
• AC-DC Power Supply
Description
SuperFET® MOSFET is Fairchild Semiconductor®’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-resis-
tance and lower gate charge performance. This technology is tai-
lored to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. Conse-
quently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
D
GD S
TO-247
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate-Soure voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case-to-Heat Sink
Thermal Resistance, Junction to Ambient
©2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C0
1
G
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
FCH35N60
600
±30
35
22.2
105
1455
35
31.25
20
312.5
2.5
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Typ.
-
0.24
-
Max.
0.4
-
42
Unit
oC/W
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
1 page  
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C0
5
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FCH35N60.PDF ] | |
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