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PDF FCD900N60Z Data sheet ( Hoja de datos )
| Número de pieza | FCD900N60Z | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FCD900N60Z
N-Channel SuperFET® II MOSFET
600 V, 4.5 A, 900 mΩ
December 2013
Features
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 820 mΩ
• Ultra Low Gate Charge (Typ. Qg = 13 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 49 pF)
• 100% Avalanche Tested
• ESD Improved Capacity
• RoHS Compliant
Applications
• LCD / LED / PDP TV and Monitor Lighting
• Solar Inverter
• Charger
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
D
G
S
D
D-PAK
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCD900N60Z
600
±20
±30
4.5
3.5
13.5
47.5
1
0.52
100
20
52
0.42
-55 to +150
300
FCD900N60Z
2.4
100
Unit
V
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
oC/W
©2012 Fairchild Semiconductor Corporation
FCD900N60Z Rev. C3
1
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
1 page  
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
3
0.5
1
0.2
0.1
0.05
0.02
0.01
Single pulse
0.1
10-5
10-4
PDM
*Notes:
t1
t2
1. ZθJC(t) = 2.4oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
Rt1e,cRtaenctgaunlgaurlaPruPlusleseDDuuraratitoionn [[sseecc]]
10-1
100
©2012 Fairchild Semiconductor Corporation
FCD900N60Z Rev. C3
5
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FCD900N60Z.PDF ] | |
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