|
|
PDF FCD9N60NTM Data sheet ( Hoja de datos )
| Número de pieza | FCD9N60NTM | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FCD9N60NTM (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
FCD9N60NTM
N-Channel MOSFET
600V, 9A, 0.385mΩ
Features
• RDS(on) = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A
• Ultra Low Gate Charge (Typ.Qg = 17.8nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
February 2010
SupreMOSTM
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based tech-
nologies. By utilizing this advance technology and precise process
control, SupreMOS provide world class Rsp, superior switching
performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
GD
S D-PAK
(TO-252)
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
D
G
S
FCD9N60N
600
±30
9.0
5.7
27
135
9.0
9.3
100
15
92.6
0.74
-55 to +150
300
FCD9N60N
1.35
62.5
©20010 Fairchild Semiconductor Corporation
FCD9N60NTM Rev. A
1
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
1 page  
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCD9N60NTM Rev. A
5 www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FCD9N60NTM.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FCD9N60NTM | N-Channel MOSFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |