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PDF 2N7632UC Data sheet ( Hoja de datos )
| Número de pieza | 2N7632UC | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD-97268A
2N7632UC
IRHLUC7670Z4
RADIATION HARDENED 60V, Combination 1N-1P-CHANNEL
LOGIC LEVEL POWER MOSFET
TECHNOLOGY
SURFACE MOUNT (LCC-6)
Product Summary
Part Number Radiation Level
IRHLUC7670Z4 100K Rads (Si)
IRHLUC7630Z4 300K Rads (Si)
RDS(on)
0.75Ω
1.60Ω
0.75Ω
1.60Ω
ID
0.89A
-0.65A
0.89A
-0.65A
International Rectifier’s R7TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
CHANNEL
N
P
N
P
LCC-6
Features:
n 5V CMOS and TTL Compatible
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID@ VGS = ±4.5V, TC= 25°C Continuous Drain Current
ID@ VGS = ±4.5V, TC=100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Pre-Irradiation
N-Channel
P-Channel
0.89 -0.65
0.56
-0.41
3.56 -2.6
1.0 1.0
0.01
0.01
±10 ±10
20 Á
34 ²
0.89
-0.65
0.1 0.1
4.7 Â
-5.6 ³
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
0.2 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
10/18/10
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1 page  
PRraed-IirartaiodniaCtiohnaracteristics
IRHLUC7670Z4, 2N7632UC
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For P-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source On-state
Resistance (LCC-6)
Upto 300K Rads (Si)1
Min Max
-60 —
-1.0 -2.0
— -100
— 100
— -1.0
— 1.40
— 1.60
Units
V
nA
µA
Ω
Ω
Test Conditions
VGS = 0V, ID = -250µA
VGS = VDS, ID = -250µA
VGS = -10V
VGS = 10V
VDS= -48V, VGS= 0V
VGS = -4.5V, ID = -0.41A
VGS = -4.5V, ID = -0.41A
VSD Diode Forward Voltage
— -5.0
V
VGS = 0V, ID = -0.65A
1. Part numbers IRHLUC7670Z4, IRHLUC7630Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
38 ± 5%
300 ± 7.5%
(µm)
38 ± 7.5%
@VGS=
0V
-60
@VGS=
2V
-60
@VGS=
4V
-60
62 ± 5%
355 ± 7.5%
33 ± 7.5%
-60
-60 -60
85 ± 5%
380 ± 7.5%
29 ± 7.5%
-60
-60 -60
@VGS=
5V
-60
-60
-60
@VGS=
6V
-60
-60
-
@VGS=
7V
-50
-
-
-70
-60
-50
-40
-30
-20
-10
0
0 1 2 34 5 6 7
Bias VGS (V)
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
5
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5 Page 
Pre-Irradiation
IRHLUC7670Z4, 2N7632UC
P-Channel
Die 2
10
VGS
TOP
-10V
-5.0V
-4.0V
-3.5V
-3.0V
1 -2.5V
-2.25V
BOTTOM -2..0V
-2.0V
0.1
0.01
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10
-VDS , Drain-to-Source Voltage (V)
100
10
VGS
TOP
-10V
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
-2.25V
BOTTOM -2..0V
1
0.1
0.1
-2.0V
60µs PULSE WIDTH
Tj = 150°C
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 19. Typical Output Characteristics
Fig 20. Typical Output Characteristics
10
TJ = 25°C
TJ = 150°C
1
0.1
2
VDS = -25V
60µs PULSE WIDTH
2.5 3 3.5 4
-VGS, Gate-to-Source Voltage (V)
4.5
Fig 21. Typical Transfer Characteristics
www.irf.com
2.0
ID = -0.65A
1.5
1.0
VGS = -4.5V
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 22. Normalized On-Resistance
Vs. Temperature
11
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