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PDF IRHLNM73110 Data sheet ( Hoja de datos )

Número de pieza IRHLNM73110
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD-97326A
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-0.2)
Product Summary
Part Number Radiation Level
IRHLNM77110 100K Rads (Si)
IRHLNM73110 300K Rads (Si)
RDS(on)
0.29
0.29
ID
6.5A
6.5A
2N7609U8
IRHLNM77110
100V, N-CHANNEL
TECHNOLOGY
™
International Rectifier’s R7TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
Absolute Maximum Ratings
Parameter
ID @VGS = 4.5V,TC = 25°C
ID @VGS = 4.5V,TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
SMD-0.2
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
6.5
4.1
26
23.2
0.18
±10
21
6.5
2.32
4.3
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
0.25 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
02/21/12
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IRHLNM73110 pdf
Pre-Irradiation
IRHLNM77110, 2N7609U8
1.0
0.9 ID = 6.5A
0.8
0.7
0.6
0.5
0.4 TJ = 150°C
0.3
0.2
0.1 TJ = 25°C
0
2 4 6 8 10 12
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
1.0
0.9
0.8
0.7 TJ = 150°C
0.6
0.5
0.4
0.3 TJ = 25°C
0.2
0.1 Vgs = 4.5V
0
0 2 4 6 8 10 12 14 16 18 20
ID, Drain Current (A)
Fig 6. Typical On-Resistance Vs
Drain Current
130
ID = 1.0mA
120
110
100
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
www.irf.com
3.0
2.5
2.0
1.5
1.0 ID = 50µA
ID = 250µA
0.5 ID = 1.0mA
ID = 150mA
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
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