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PDF IRHF67230 Data sheet ( Hoja de datos )

Número de pieza IRHF67230
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD-97311
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level
IRHF67230 100K Rads (Si)
IRHF63230 300K Rads (Si)
RDS(on)
0.145
0.145
ID
9.1A
9.1A
IRHF67230
200V, N-CHANNEL
TECHNOLOGY
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer (LET)
up to 90MeV/(mg/cm2). Their combination of very low
RDS(on) and faster switching times reduces power
loss and increases power density in today’s high
speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
T0-39
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
9.1
5.7 A
36.4
25 W
0.2 W/°C
±20 V
23 mJ
9.1 A
2.5 mJ
4.8
-55 to 150
V/ns
°C
300 (0.063in/1.6mm from case for 10s)
0.98 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
09/16/11
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IRHF67230 pdf
Pre-Irradiation
IRHF67230
500
450 ID = 9.1A
400
350
300 TJ = 150°C
250
200
TJ = 25°C
150
100
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
500
400 TJ = 150°C
300
200 TJ = 25°C
100
0
VGS = 12V
10 20 30
ID, Drain Current (A)
40
Fig 6. Typical On-Resistance Vs
Drain Current
260
ID = 1.0mA
250
240
230
220
210
200
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
www.irf.com
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0 ID = 50µA
1.5 ID = 250µA
1.0 ID = 1.0mA
0.5 ID = 150mA
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
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