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Número de pieza | IRFY440C | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRFY440C (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! PD-91292D
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number RDS(on)
IRFY440C
IRFY440CM
0.85 Ω
0.85 Ω
ID
7.0A
7.0A
Eyelets
Ceramic
Ceramic
IRFY440C, IRFY440CM
500V, N-CHANNEL
HEXFET® MOSFET TECHNOLOGY
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state
resistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as
switching power supplies, motor controls, inverters,
choppers, audio amplifiers, high energy pulse circuits, and
virtually any application where high reliability is required.
The HEXFET transistor’s totally isolated package eliminates
the need for additional isolating material between the device
and the heatsink.This improves thermal efficiency and
reduces drain capacitance.
TO-257AA
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Ceramic Eyelets
n Ideally Suited For Space Level
Applications
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
7.0
4.4 A
IDM Pulsed Drain Current À
28
PD @ TC = 25°C
Max. Power Dissipation
100 W
Linear Derating Factor
0.8 W/°C
VGS
Gate-to-Source Voltage
±20 V
EAS Single Pulse Avalanche Energy Á
510
mJ
IAR Avalanche Current À
7.0 A
EAR
Repetitive Avalanche Energy À
10 mJ
dv/dt
Peak Diode Recovery dv/dt Â
3.5 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
oC
Lead Temperature
300(0.063in./1.6mm from case for 10 sec)
Weight
4.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
05/17/05
Free Datasheet http://www.Datasheet4U.com
1 page Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRFY440C, IRFY440CM
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-V DD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
t2
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
1
5
Free Datasheet http://www.Datasheet4U.com
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet IRFY440C.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFY440 | N-CHANNEL POWER MOSFET | Seme LAB |
IRFY440 | Power MOSFET ( Transistor ) | International Rectifier |
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IRFY440CM | POWER MOSFET N-CHANNE | International Rectifier |
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