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PDF IRFR7446PBF Data sheet ( Hoja de datos )

Número de pieza IRFR7446PBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRFR7446PBF Hoja de datos, Descripción, Manual

StrongIRFET™
IRFR7446PbF
Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l PWM Inverterized topologies
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
HEXFET® Power MOSFET
D VDSS
40V
RDS(on) typ.
3.0mΩ
max. 3.9mΩ
cG
ID (Silicon Limited)
120A
S ID (Package Limited)
56A
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dv/dt and dI/dt Capability
l Lead-Free
G
Gate
D
S
G
D-Pak
IRFR7446TRPbF
D
D ra in
S
Source
Ordering Information
Orderable part number Package Type
IRFR7446PBF
IRFR7446TRPBF
D-PAK
D-PAK
Standard Pack
Form
Quantity
Tube/Bulk
75
Tape and Reel
2000
Complete Part Number
IRFR7446PBF
IRFR7446TRPBF
10
ID = 56A
8
6
TJ = 125°C
4
TJ = 25°C
2
4 8 12 16 20
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2013 International Rectifier
120
LIMITED BY PACKAGE
100
80
60
40
20
0
25
50 75 100 125 150
TC, Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
March 22, 2013
Free Datasheet http://www.Datasheet4U.com

1 page




IRFR7446PBF pdf
IRFR7446PbF
1000
1000
100 TJ = 175°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
Fig 9. Typical Source-Drain Diode
Forward Voltage
49
Id = 1.0mA
48
47
46
45
44
43
42
41
40
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 11. Drain-to-Source Breakdown Voltage
16.0
14.0
12.0
10.0
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS =10V
100
10
100μsec
Limited by Package
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1msec
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
DC
10
VDS, Drain-toSource Voltage (V)
Fig 10. Maximum Safe Operating Area
0.4
0.3
0.2
0.1
0.0
0
10 20 30
VDS, Drain-to-Source Voltage (V)
Fig 12. Typical COSS Stored Energy
40
8.0
6.0
4.0
2.0
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5 www.irf.com © 2013 International Rectifier
March 22, 2013
Free Datasheet http://www.Datasheet4U.com

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