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PDF IRFI3306GPBF Data sheet ( Hoja de datos )

Número de pieza IRFI3306GPBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Benefits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Halogen-Free
IRFI3306GPbF
VDSS
RDS(on)
ID
typ.
max.
 D
60V
3.3m
4.2m
71A
D 
G
G
Gate
S
D
G
S
TO-220 Full-Pak
D
Drain
S
Source
Base Part Number
IRFI3306GPbF
Package Type
TO-220 Full-Pak
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFI3306GPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
EAS
TJ
TSTG
Single Pulse Avalanche Energy (Thermally Limited)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance  
Symbol
Parameter
RJC
Junction-to-Case
RJA Junction-to-Ambient (PCB Mount)
Max.
71
50
300
46
0.31
± 20
311
-55 to + 175
300
10lbin (1.1Nm)
Typ.
–––
–––
Max.
3.23
65
Units
A
W
W/°C
V
mJ
 
°C 
 
 
Units
°C/W
1 www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
October 7, 2013
Free Datasheet http://www.Datasheet4U.com

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IRFI3306GPBF pdf
 
10
IRFI3306GPbF
D = 0.50
1
0.20
0.10
0.05
0.1 0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
0.01
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14. Typical Avalanche Current vs.Pulsewidth
350
TOP
Single Pulse
300 BOTTOM 1.0% Duty Cycle
ID = 43A
250
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 13, 14:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
5  www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
October 7, 2013
Free Datasheet http://www.Datasheet4U.com

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