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PDF IRFHM8337TRPBF Data sheet ( Hoja de datos )

Número de pieza IRFHM8337TRPBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRFHM8337TRPBF Hoja de datos, Descripción, Manual

VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC = 25°C)
30
12.4
17.9
5.4
18
V
m
nC
A
Applications
System/load switch,
Charge or discharge switch for battery protection
Features
Low Thermal Resistance to PCB (< 5.0°C/W)
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1,Consumer Qualification
  Top View
 
D5
D6
D7
D8
4G
3S
2S
1S
IRFHM8337TRPbF
HEXFET® Power MOSFET
 
PQFN 3.3 x 3.3 mm
Benefits
Enable better Thermal Dissipation
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
 
IRFHM8337PbF
Package Type
 
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8337TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through are on page 8
1 www.irf.com © 2013 International Rectifier
 
Max.
± 20
12
9.4
94
35
22
18
2.8
25
0.02
-55 to + 150
 
Units
V
A 
W
W/°C
°C
August 21, 2013
Free Datasheet http://www.Datasheet4U.com

1 page




IRFHM8337TRPBF pdf
 
35
30
25
ID = 12A
60
50
40
IRFHM8337TRPbF
ID
TOP 2.95A
3.63A
BOTTOM 9.40A
20 30
TJ = 125°C
15 20
10
TJ = 25°C
5
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On– Resistance vs. Gate Voltage
10
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
10 Tstart =25°C (Single Pulse)
1
0.1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 125°C.
0.01
1.0E-05
1.0E-04
1.0E-03
tav (sec)
1.0E-02
Fig 14. Single avalanche event: pulse current vs. pulse width
1.0E-01
5 www.irf.com © 2013 International Rectifier
August 21, 2013
Free Datasheet http://www.Datasheet4U.com

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