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PDF 2SA1505 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1505 | |
| Descripción | PNP Silicon Epitaxial Planar Transistor | |
| Fabricantes | PACO | |
| Logotipo |  |
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ST 2SA1505
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into two groups, O
and Y, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Symbol
-VCBO
-VCEO
-VEBO
-IC
-IB
Ptot
Tj
Tstg
Value
35
30
5
500
50
150
150
- 55 to + 150
Unit
V
V
V
mA
mA
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 1 V, -IC = 100 mA
Current Gain Group
at -VCE = 6 V, -IC = 400 mA
Collector Base Cutoff Current
at -VCB = 35 V
Emitter Base Cutoff Current
at -VEB = 5 V
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 10 mA
Base Emitter Voltage
at -VCE = 1 V, -IC = 100 mA
Gain Bandwidth Product
at -VCE = 6 V, -IC = 20 mA
Output Capacitance
at -VCB = 6 V, f = 1 MHz
Symbol
O hFE
Y hFE
O hFE
Y hFE
-ICBO
-IEBO
-VCE(sat)
-VBE
fT
Cob
Min.
70
120
25
40
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
0.1
0.8
200
13
Max.
140
240
-
-
0.1
0.1
0.25
1
-
-
Unit
-
-
-
-
µA
µA
V
V
MHz
pF
Dated : 12/12/2002
Free Datasheet http://www.Datasheet4U.com
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