PDF IRF1010 Data sheet ( Hoja de datos )

Número de pieza	IRF1010
Descripción	N-Channel Power MOSFET / Transistor
Fabricantes	nELL
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No Preview Available ! SEMICONDUCTOR IRF1010 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET DESCRIPTION (84A, 60Volts) The Nell IRF1010 is a three-terminal silicon device with current conduction capability of 84A, fast switching speed, low on-state resistance, breakdown voltage rating of 60V, and max. threshold voltage of 4 volts. They are designed as an extremely efficient and reliable device for use in a wide variety of applications. These transistors can be operated directly from integrated circuits. FEATURES RDS(ON) = 8.5mΩ @ VGS = 10V Ultra low gate charge(86nC max.) Low reverse transfer capacitance (CRSS = 200pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature D GDS TO-220AB (IRF1010A) D G D S TO-263(D2PAK) (IRF1010H) D (Drain) PRODUCT SUMMARY ID (A) ID (A), Package Limited VDSS (V) RDS(ON) (mΩ) QG(nC) max. 84 75 60 8.5 @ VGS = 10V 86 G (Gate) S (Source) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VALUE UNIT VDSS VDGR VGS Drain to Source voltage Drain to Gate voltage Gate to Source voltage TJ=25°C to 150°C RGS=20KΩ 60 60 V ±20 ID Continuous Drain Current (Note 1) IDM Pulsed Drain current(Note 2) VGS=10V, TC=25°C VGS=10V, TC=100°C 84 60 A 340 IAR EAR EAS dv/dt Avalanche current(Note 2) Repetitive avalanche energy(Note 2) Single pulse avalanche energy(Note 3) Peak diode recovery dv/dt(Note 4) See fig.12,16,17 L=0.077mH, IAS=51A 51 mJ 99 5 V /ns Total power dissipation PD Derating factor above 25°C TC=25°C 140 0.90 W W /°C TJ Operation junction temperature -55 to 175 TSTG Storage temperature -55 to 175 ºC TL Maximum soldering temperature, for 10 seconds 1.6mm from case 300 Mounting torque, #6-32 or M3 screw 10 (1.1) Note: 1.Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. 2.Repetitive rating: pulse width limited by junction temperature. 3.L=0.077mH, IAS≤51A, RG=25Ω, starting TJ=25˚C 4.ISD ≤ 51A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. www.nellsemi.com Page 1 of 7 lbf.in (N.m) 1 page SEMICONDUCTOR 10 IRF1010 Series RRooHHSS Nell High Power Products Fig.10 Maximum effective transient thermal lmpedance, Junction-to-Case 1 0.1 0.01 0.001 10-6 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse (Thermal response) 10-5 0.0001 τJ τ1 R1 τCi = i/Ri R2 τ2 Ri (°C/W) τi (sec) τC 0.415 0.000246 0.410 0.000898 0.285 0.000954 Notes: 1. Duty factor, D = t1/ t2 2. Peak Tj = PDM * Rth(j-c) +TC 0.001 0.01 0.1 Rectangular Pulse Duration, t1 (sec) Fig.11a. Switching time test circuit Fig.11b. Switching time waveforms VDS VGS RG RD D.U.T. 10V Pulse width ≤ 1µs Duty Factor ≤ 0.1% + - VDD VDS 90% 10% VGS td(ON) tR td(OFF) tF Fig.12a. Unclamped lnductive test circuit Fig.12b. Unclamped lnductive waveforms VDS L RG 20V tP D.U.T. lAS 0.01Ω 15V DRIVER BVDSS lAS + - VDD A VDD lD(t) tp VDS(t) Time www.nellsemi.com Page 5 of 7 5 Page

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