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PDF 65N20-30 Data sheet ( Hoja de datos )
| Número de pieza | 65N20-30 | |
| Descripción | SUM65N20-30 | |
| Fabricantes | Vishay Siliconix | |
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New Product
SUM65N20-30
Vishay Siliconix
N-Channel 200-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
200
rDS(on) (W)
0.030 @ VGS = 10 V
ID (A)
65 a
D
TO-263
G DS
Top View
SUM65N20-30
G
S
N-Channel MOSFET
FEATURES
D TrenchFETr Power MOSFETS
D 175_C Junction Temperature
D New Low Thermal Resistance Package
APPLICATIONS
D Automotive
– 42-V EPS and ABS
– DC/DC Conversion
– Motor Drives
D Isolated DC/DC converters
– Primary-Side Switch
– High Voltage Synchronous Rectifier
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 200
VGS "20
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energyb
Maximum Power Dissipationb
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 125_C
L = 0.1 mH
TC = 25_C
TA = 25_Cd
ID
IDM
IAR
EAR
PD
TJ, Tstg
65a
37a
140
35
61
375c
3.75
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount (TO-263)d
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71702
S-04920—Rev. A, 15-Oct-01
Symbol
RthJA
RthJC
Limit
40
0.4
Unit
_C/W
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1
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THERMAL RATINGS
New Product
SUM65N20-30
Vishay Siliconix
Maximum Avalanche and Drain Current
vs. Case Temperature
75
60
45
30
15
0
0 25 50 75 100 125 150 175
TC – Ambient Temperature (_C)
1000
100
10
1
0.1
0.1
Safe Operating Area
Limited
by rDS(on)
10 ms
TC = 25_C
Single Pulse
100 ms
1 ms
10 ms
100 ms
dc
1 10 100
VDS – Drain-to-Source Voltage (V)
1000
2
1 Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
0.01
10–4
10–3
10–2
Square Wave Pulse Duration (sec)
10–1
1
Document Number: 71702
S-04920—Rev. A, 15-Oct-01
www.vishay.com
5
Free Datasheet http://www.Datasheet4U.com
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