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PDF 4N60B Data sheet ( Hoja de datos )
| Número de pieza | 4N60B | |
| Descripción | N-channel I-PAK/D-PAK/TO-220F MOSFET | |
| Fabricantes | SEMIPOWER | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 4N60B (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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SAMWIN
SW4N60B
N-channel I-PAK/D-PAK/TO-220F MOSFET
Features
TO-251
TO-252
TO-220F
■ High ruggedness
■ RDS(ON) (Max 2.5 Ω)@VGS=10V
■ Gate Charge (Typ 11nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
1
2
3
1
2
3
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.
BVDSS : 600V
ID : 4A
RDS(ON) : 2.5Ω
2
1
3
Order Codes
Item Sales Type
1 SW I 4N60
2 SW D 4N60
3 SW F 4N60
Absolute maximum ratings
Marking
SW4N60B
SW4N60B
SW4N60B
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 2)
(note 1)
(note 3)
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Package
TO-251
TO-252
TO-220F
Packaging
TUBE
REEL
TUBE
Value
TO-251 TO-252 TO-220F
600
4*
2.5*
16
± 30
271
50
5
140 144.5 19.1
1.1 1.2 0.152
-55 ~ + 150
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
300 oC
TO-251
0.91
Value
TO-252
0.87
TO-220F
6.56
76.1 78.9 48.32
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev. 3.0
1/7
Free Datasheet http://www.Datasheet4U.com
1 page  
SAMWIN
SW4N60B
Fig. 13. Gate charge test circuit & waveform
Same type
as DUT
1mA
VGS
VGS
VDS
DUT
10V
QGS
QG
QGD
Charge
Fig. 14. Switching time test circuit & waveform
nC
RGS
10VIN
RL
VDS
DUT
VDD
VDS 90%
VIN 10%
td(on)
10%
tr
tON
td(off)
tf
tOFF
Fig. 15. Unclamped Inductive switching test circuit & waveform
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev. 3.0
6/7
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 4N60B.PDF ] | |
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