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PDF C3195 Data sheet ( Hoja de datos )
| Número de pieza | C3195 | |
| Descripción | NPN Silicon Epitaxial Planar Transistor | |
| Fabricantes | PACO | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de C3195 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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ST 2SC3195
NPN Silicon Epitaxial Planar Transistor
High frequency low noise amplifier application
VHF band amplifier application
The transistor is subdivided into three groups R,
O and Y, according to its DC current gain
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Emitter Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Symbol
VCBO
VCEO
VEBO
IC
IE
Ptot
Tj
Tstg
Value
40
30
4
20
-20
100
150
- 55 to + 150
Unit
V
V
V
mA
mA
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Symbol
DC Current Gain
at VCE = 6 V, IC = 1 mA
Current Gain Group R
O
Y
hFE
hFE
hFE
Collector Base Cutoff Current
at VCB = 40 V
ICBO
Emitter Base Cutoff Current
at VEB = 4 V
IEBO
Transition Frequency
at VCE = 6 V, IC = 1 mA
fT
Reverse Transfer Capacitance
at VCE = 6 V, f = 1 MHz
Cre
Collector Base Time Constant
at VCE = 6 V, IE = -1 mA, f = 30 MHz
Cc·rbb’
Noise Figure
at VCC = 6 V, f = 100 MHz, IE = -1 mA
NF
Power Gain
at VCC = 6 V, f = 100 MHz, IE = -1 mA
Gpe
Min.
40
70
100
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
550
0.7
-
2.5
18
Max.
80
140
200
0.5
0.5
-
-
20
5
-
Unit
-
-
-
µA
µA
MHz
pF
ps
dB
dB
Dated : 07/12/2002
Free Datasheet http://www.Datasheet4U.com
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