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PDF 2SB764 Data sheet ( Hoja de datos )
| Número de pieza | 2SB764 | |
| Descripción | PNP Transistor | |
| Fabricantes | JIANGSU CHANGJIANG | |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
2SB764 TRANSISTOR (PNP)
FEATURES
z General Purpose Switching Application
TO – 92L
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-50
-5
-1
750
167
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC=-10µA,IE=0
-60
V
V(BR)CEO IC=-1mA,IB=0
-50
V
V(BR)EBO IE=-10µA,IC=0
-5
V
ICBO
VCB=-50V,IE=0
-1 μA
IEBO VEB=-4V,IC=0
-1 μA
hFE(1)
VCE=-2V, IC=-50mA
60
320
hFE(2)
VCE=-2V, IC=-1A
30
VCE(sat)
IC=-500mA,IB=-50mA
-0.7 V
VBE (sat) IC=-500mA,IB=-50mA
-1.2 V
Cob VCB=-10V,IE=0, f=1MHz
20
pF
fT VCE=-10V,IC=-50mA
150 MHz
CLASSIFICATION OF hFE(1)
RANK
D
RANGE
60-120
E
100-200
F
160-320
A,Dec ,2010
Free Datasheet http://www.Datasheet4U.com
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SB764.PDF ] | |
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