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PDF IRF6709S2TR1PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF6709S2TR1PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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l RoHS Compliant and Halogen Free
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET Application
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
PD - 97328A
IRF6709S2TRPbF
IRF6709S2TR1PbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 5.9mΩ@10V 10.1mΩ@4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
8.1nC 2.8nC 1.1nC 9.3nC 4.6nC 1.8V
Applicable DirectFET Outline and Substrate Outline
S1 DirectFET ISOMETRIC
S1 S2 SB
M2 M4
L4 L6 L8
Description
The IRF6709S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6709S2TRPbF has low charge along with ultra low package inductance providing significant reduction in switching losses. The
reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at
higher frequencies. The IRF6709S2TRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus
converters.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
25 V
±20
12
9.7 A
39
100
51 mJ
10 A
30 14.0
ID = 12A
12.0 ID= 10A
VDS= 20V
20 10.0 VDS= 13V
8.0
10
TJ = 125°C
6.0
4.0
TJ = 25°C
0
0 2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
2.0
0.0
0 2 4 6 8 10 12 14 16 18 20
QG Total Gate Charge (nC)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.02mH, RG = 25Ω, IAS = 10A.
1
04/07/09 Free Datasheet http://www.Datasheet4U.com
1 page  
100
TJ = 175°C
TJ = 25°C
10 TJ = -40°C
1
VGS = 0V
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
IRF6709S2TR/TR1PbF
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10 1msec
10msec
1 DC
0.1 TA = 25°C
TJ = 175°C
Single Pulse
0.01
0.01 0.10
1.00
10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
40 3.0
35
30
25
20
15
10
5
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
60
TJ = 25°C
50
40
30 TJ = 175°C
20
10
0
0
2VDS = 4.5V
380µs PULSE WIDTH
5 10 15 20 25 30 35 40 45
ID,Drain-to-Source Current (A)
2.5
2.0
1.5 ID = 25µA
ID = 250µA
1.0 ID = 1.0mA
ID = 1.0A
0.5
0.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
220
200 ID
180
TOP
10A
4.3A
160 BOTTOM 2.0A
140
120
100
80
60
40
20
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 14. Typ. Forward Transconductance vs. Drain Current Fig 15. Maximum Avalanche Energy vs. Drain Current
www.irf.com
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF6709S2TR1PBF.PDF ] | |
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